Spin Polarization Oscillation and Spin-Polarized Diode Based on Graphene Rashba–Strain Double Junctions  

作　　者：伍清萍 刘正方 陈爱喜 何兴道 

机构地区：[1]School of Basic Science,East China Jiaotong University [2]School of Measuring and Optical Engineering,Nanchang Hangkong University

出　　处：《Communications in Theoretical Physics》2014年第1期135-140,共6页理论物理通讯（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos.11364019,11165008,11065007;the Foundation of East China Jiaotong University under Grant No.09121038

摘　　要：We investigate spin-dependent electron transport through graphene-based Rash ba-strain double junctions. It is found that when electrons are injected from left normal graphene region, high spin polarization oscillation is achieved due to the wave-vector-dependent resonant tunneling. The spin polarization is negligible once the incident direction is reversed. Such a remarkable difference arises from pseudogap caused by the Rashba spin-orbit interaction.

关 键 词：GRAPHENE spin polarization diode Rashba spin-orbit interaction strian 

分 类 号：O471[理学—半导体物理] TN31[理学—物理]