磁控溅射掺铜TiO_2薄膜光学特性的分析  

Characterization of Optical Properties of Cu-Doped TiO_2 Thin Films

作　　者：胡斌[1] 林钰[2] 董林[1] 姚志强[1] 田莉[1] 辛荣生[1] 

机构地区：[1]郑州大学材料科学与工程学院,郑州450001 [2]河南教育学院化学系,郑州450014

出　　处：《真空科学与技术学报》2014年第1期74-78,共5页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金项目(52102224)

摘　　要：采用射频/直流磁控共溅射法制备不同Cu掺杂量的氧化钛薄膜,研究了Cu掺杂对TiO2膜吸收边红移的影响,并探索其机理。发现当TiO2溅射功率为160 W,Cu溅射功率为30 W时,TiO2薄膜的吸收边红移最为明显,至420 nm左右。X射线衍射(XRD)结果表明:500℃下退火处理得到的薄膜主要为锐钛矿相,但随着Cu掺量的提高,薄膜XRD衍射峰明显宽化,结晶性变差,将会在TiO2薄膜晶体中引入缺陷。X射线光电子谱结果表明:Cu以2+价存在,并掺杂进入TiO2晶格,引入受主杂质能级。结论认为Cu掺杂形成的缺陷能级和杂质能级是导致TiO2薄膜光吸收边拓展至可见光区域的原因。The Cu-doped TiO2 films were synthesized by RF/DC multi-target, magnetron sputtering on glass sub- strates under the optimized condition. The impacts of the growth conditions, including the Cu-content, sputtering power, and annealing,on the microstructures and properties of the Cu-doped TiO2 films were evaluated. The films were character- ized with X-ray diffraction, X-ray photoelectron spectroscopy, and ultraviolet visible spectroscopy. The results show that the Cu-content strongly affects the properties of the films. For example, Cu-doping resulted in a red-shift of the absorption edge of the anatase phased TiO2 films, with Cu ＋ 2 implanted in its lattice as an acceptor impurity. However, high Cu- content produced an increased density of defects. We suggest that Cu ions and Cu-induced defects may generate impurity and defect levels, making it possible for the TiO2 films to absorb wide range of the visible light.

关 键 词：磁控溅射 CU掺杂 TIO2薄膜 吸收限红移 

分 类 号：TQ134.1[化学工程—无机化工]