Synthesis and ceramization of polycarbosilane containing beryllium  

作　　者：黄小忠 周珊 程勇 杜作娟 段曦东 王超英 

机构地区：[1]School of Physics and Electronic,Central South University [2]College of Science,Guilin University of Technology [3]Boom Material Company Limited

出　　处：《Journal of Central South University》2014年第1期71-75,共5页中南大学学报（英文版）

基　　金：Project(51074193)supported by the National Natural Science Foundation of China;Projects(2011AA7024034,2011AA7053016)supported by the National High Technology Research and Development Program of China;Project(LK0903)supported by State Key Laboratory for Modification of Chemical Fibers and Polymer Materials,Donghua University,China

摘　　要：Polycarbosilane containing beryllium(BPCS) precursors was prepared by the reaction of polycarbosilane(PCS) with beryllium acetylacetone(Be(acac)2).The analysis of structures and components of BPCS demonstrates that their main structures are basically the same as PCS.Ceramization of BPCS precursors shows that BPCS precursors are organic below 600 °C and inorganic at 800 °C.At 1400 °C,BPCS precursors convert into silicon carbide ceramics.The ceramization of different beryllium content precursors were studied,which show that beryllium plays an important role in the inhibition of crystalline grain growth of β-SiC at high temperature and it can adjust the dielectric constant of silicon carbide ceramics.Polycarbosilane containing beryllium （BPCS） precursors was prepared by the reaction of polycarbosilane （PCS） with beryllium acetylacetone （Be （acac）2）. The analysis of structures and components of BPCS demonstrates that their main structures are basically the same as PCS. Ceramization of BPCS precursors shows that BPCS precursors are organic below 600 °C and inorganic at 800 °C. At 1400 °C, BPCS precursors convert into silicon carbide ceramics. The ceramization of different beryllium content precursors were studied, which show that beryllium plays an important role in the inhibition of crystalline grain growth of β-SiC at high temperature and it can adjust the dielectric constant of silicon carbide ceramics.

关 键 词：POLYCARBOSILANE BERYLLIUM PRECURSOR CERAMIZATION 

分 类 号：TQ174.1[化学工程—陶瓷工业]