半导体激光器改进电路模型的大信号验证(英文)  

Large Signal Verification of an Improved Circuit Model for Semiconductor Lasers

作　　者：田学农[1] 高建军[2] 

机构地区：[1]苏州科技学院电子与信息工程学院,江苏苏州215009 [2]华东师范大学信息科学技术学院,上海200241

出　　处：《电子器件》2014年第1期55-58,共4页Chinese Journal of Electron Devices

基　　金：supported by the State Key Laboratory of Advanced Optical Communication Systems and Networks,Shanghai Jiao Tong University,China~~

摘　　要：实现了一种可以对于反射系数进行精确建模的半导体激光器电路模型并且与传统模型进行了比较。在ADS(Advanced Design Systems)中使用了SDD(Symbolic Defined Devices)器件实现,对于速率方程进行了变形以改进模型的收敛性,该模型可用于大信号仿真。对于不同偏置条件下的半导体激光器的反射系数进行了仿真并且和测量结果进行了对比。首次在大信号仿真中验证了改进模型的精确性。An implementation of an improved circuit model of semiconductor lasers which can model the reflection coefficient more accurately is presented and the comparison between the improved model and the conventional counterpart is made. The SDD（Symbolic Defined Devices）component in ADS（Advanced Design Systems）is used and the transformation of the rate equations is taken to improve the convergence of the model. The reflection coefficient of the lasers is simulated with the model under different bias conditions and is compared with the experimental results. The accuracy of the improved model is first time verified in large signal simulation.

关 键 词：电路模型 半导体激光器 速率方程 收敛性 

分 类 号：TN248.4[电子电信—物理电子学]