纳米硅上的弯曲表面效应及其特征发光  

Curved surface effect and characteristic emission of silicon nanostructures

作　　者：黄伟其[1] 黄忠梅[1] 苗信建[1] 尹君[1] 周年杰[1] 刘世荣[2] 秦朝建[2] 

机构地区：[1]贵州大学,纳米光子物理研究所,贵阳550025 [2]中国科学院地球化学矿床化学研究所国家重点实验室,贵阳550003

出　　处：《物理学报》2014年第3期123-130,共8页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:No.11264007)资助的课题~~

摘　　要：纳米硅结构使能带的带隙展宽,并形成准直接能带带隙结构.弯曲表面上的某些键合可以在带隙中产生局域电子态,计算表明:纳米硅弯曲表面上的Si-N,Si=O和Si-O-Si键合能够分别在带隙中2.02 eV,1.78 eV和2.03 eV附近形成局域态子带,对应了实验光致荧光谱(PL)中605 nm处的LN线、693 nm处的LO1线和604 nm处的LO2线特征发光.特别是,Si-Yb键合在纳米硅弯曲表面上可以将发光波长调控到光通信窗口,在1310 nm到1600 nm范围形成LYb线特征发光.Some bonds on the curved surface （CS） of silicon nanostructures can produce localized electron states in the band gap. Calculated results show that different curvature can form the characteristic electron states for some special bonding on nanosilicon surface, which are related to a series peaks in photoluminescience （PL）, such as LN, Lol and Lo2 lines in PL spectra due to Si-N, Si=O and Si-O-Si bonds on the curved surface, respectively. In the same way, Si--Yb bond on the curved surface of Si nanostructures can manipulate the emission wavelength into the window of optical communication by the CS effect, which is marked as LYb line near 1550 nm in the electroluminescience （EL）.

关 键 词：纳米硅结构 弯曲表面效应 局域态 特征线 

分 类 号：TB383.1[一般工业技术—材料科学与工程] O482.31[理学—固体物理]