硅基AlN椭圆形IDT-SAW滤波器的设计  

The Design of Silicon Substrate AlN Ellipse IDT Structure SAW Filter

作　　者：王代强[1,2,3] 陈雨青[4] 姚祖铭[1] 刘桥[2,3] 

机构地区：[1]贵州大学人民武装学院,贵阳550025 [2]贵州大学电子信息学院,贵阳550025 [3]贵州省微纳电子与软件技术重点实验室,贵阳550025 [4]贵阳学院,贵阳550025

出　　处：《传感技术学报》2013年第12期1691-1694,共4页Chinese Journal of Sensors and Actuators

基　　金：贵州省自然科学基金项目([2012]2126);国家自然科学基金项目(61361012;612620070;贵州省社发攻关项目(黔科合SY字[2010]);贵州省科技厅项目(2013GZ41759)

摘　　要：在已知的压电材料中,AlN薄膜的声表面波传播速度是最快的。采用硅基AlN薄膜作为压电材料,利用变迹加权的方法来优化设计IDT,改进型δ函数模型为椭圆形结构IDT的建模工具。通过建模仿真并根据仿真结果设计SAW带通滤波器版图,在实验室制作了中心频率为300MHz,带内插损11dB的SAW带通滤波器样品,测试结果表明其仿真结果与试验结果一致性较好,具有实际应用意义。The propagation velocity of surface acoustic wave （SAW）of AlN film is the fastest in the known piezoelectric materials. The AlN/Si film is used in this design, weighting apodization methods was used to optimize the design of IDT, and the improved 8 function model was used as modeling tool of weighted apodization ellipse IDT structure. According to the results of simulation, a layout of SAW band-pass filter was designed and a sample was fabricated with center frequency of 300 MHz and insertion loss of 11 dB. The test results show the consisteney of simulation results and experimental results. The design shows its potential in practical application.

关 键 词：滤波器 椭圆形IDT结构 变迹加权 插入损耗 ALN薄膜 

分 类 号：TP212.4[自动化与计算机技术—检测技术与自动化装置]