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机构地区:[1]深圳市国微电子有限公司,广东深圳518000
出 处:《电子器件》2013年第6期765-768,共4页Chinese Journal of Electron Devices
摘 要:介绍了一种高速抗辐照存储器。经过基准电流电路及电流比较器电路设计,使PROM(可编程只读存储器)能够达到25 MHz的工作频率。所采用的电流比较器读取时连续求值,不会产生SEU(单粒子翻转),实现了PROM高可靠要求。通过三模冗余及系统校验的方法实现抗辐照SET(单粒子瞬态翻转)加固,并在PROM存储器中实现。PROM存储器经过读取时间测试及抗辐照试验,结果表明,高速抗辐照电流比较器的设计符合指标要求。This paper introduces a high-speed radiation-hardened memory which can be realized by enabhng the speed of PROM's working frequency reaching 25 MHz via the design of the reference current circuit and the current eomparator circuit. The current comparator adopted in this paper can read continuously without producing SEU ( Single Event Upset) with the result of high reliability of PROM. The SET ( Single Event Transients ) radiation hardened is realized as well as in the PROM memory through the three-module redundancy and system calibration method. After the PROM memory experienced reading time and radiation-hardened experiment, the results show that the design of high speed radiation hardened current comparator is capable to meet the regulated requirements.
分 类 号:TN402[电子电信—微电子学与固体电子学]
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