基于GaAsPHEMT的6～10GHz多功能芯片  

A 6-10 GHz Multi Function Chip Based on GaAs PHEMT

作　　者：徐伟[1] 吴洪江[1] 魏洪涛[1] 周鑫[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2014年第2期103-107,共5页Semiconductor Technology

摘　　要：介绍了一种基于GaAsPHEMT工艺的多功能芯片（MFC）设计。该芯片主要用于双向放大，具有低噪声性能和中等功率能力。综合考虑噪声、功率、效率和有源器件的正常工艺波动，选取合适的器件及其工作点、电路拓扑结构，使电路性能达到最优。采用大信号模型、噪声模型和开关模型联合仿真完成该芯片设计，并对版图进行电磁场仿真。测试结果表明，在6～10GHz频带内：小信号增益大于18．5dB，增益平坦度小于±0．2dB，输入／输出电压驻波比小于1．4：1，噪声系数小于2．2dB，1dB压缩点输出功率大于14dBm。芯片尺寸为2．4mm×2．6mm。The multi function chip （MFC） based on GaAs PHEMT technology was designed and fabricated for bidirectional amplification. Moreover, the chip was characterized with low noise performance and medium power ability. The noise, power, efficiency and process fluctuations of the active devices were considered to select the appropriate active devices and its operating point for optimizing the circuit performances. The large signal model, noise model and switch model were combined into the simulation and design. Besides, the equivalent electromagnetic layout simulation was conducted. The test results show that the MFC achieves a noise figure of less than 2.2 dB with an associated small signal gain of more than 18.5 dB, the gain flatness is less than ± 0.2 dB in the frequency from 6 to 10 GHz, the input/output voltage standing wave ratio is less than 1.4 ： 1, and the output power is more than 14 dBm at 1 dB compression point. The chip size is 2.4 mm×2.6 mm.

关 键 词：多功能芯片(MFC) 砷化镓 赝高电子迁移率晶体管 单片微波集成电路 大信号模型 

分 类 号：TN43[电子电信—微电子学与固体电子学]