雾化施液CMP工艺及材料去除机制研究  

Removal Mechanism and Processes in Atomized Slurry Applied CMP

作　　者：王陈 李庆忠 朱仌 闫俊霞 

机构地区：[1]江南大学机械工程学院,江苏无锡214122

出　　处：《润滑与密封》2014年第2期56-60,共5页Lubrication Engineering

基　　金：国家自然科学基金项目(51175228)

摘　　要：介绍通过雾化供液方式进行化学机械抛光(CMP)的工作原理以及试验装置设计,通过雾化供液抛光工艺试验考察该方法的抛光效果,分析其材料去除机制。结果表明,雾化施液CMP方法的抛光浆料利用率高,在达到去除率为257.5 nm/min,表面粗糙度小于3.8 nm的抛光效果时,雾化抛光液消耗量仅为350 mL。雾化抛光材料去除机制是表面材料分子级氧化磨损去除,即通过抛光液中氧化剂的化学作用使表面原子氧化并弱化其结合键能,通过磨粒的机械作用将能量传递给表面分子,使表面分子的能量大于其结合键能而被去除。Principles of operation and design of experimental devices of atomized slurry applied CMP were introduced. The polishing effect of atomized slurry applied chemical mechanical polishing （CMP） was investigated by the processing tests and the material removal mechanism was analyzed. The results show that the atomized slurry applied CMP method has high slurry using efficiency, and the consumption of atomized slurry is only 350 mL when realizing the polishing effect of silicon surface roughness less than 3.8 nm at the material removal rate of 257.5 nm/min. The material removal mechanism of atomized slurry applied CMP is the molecular-scale removal of the oxidative wear, that is oxidizing the surface atoms and weakening its bonding energy by the chemical function of the oxidizing agent in the polishing atomized liquid, and transferring the energy to the surface molecules by mechanical function of the abrasive particles, thus they will be removed when their energy are greater than that of the bonds.

关 键 词：雾化施液 CMP 工艺试验 材料去除机制 

分 类 号：TG84[金属学及工艺—公差测量技术]