高能微波辐照条件下SiC晶粒的生长过程分析  

Growth Process of SiC Grains Prepared by High-energy Microwave Irradiation

作　　者：黄珊[1,2] 王继刚[1,2] 刘松[1,2] 李凡[1,2] 

机构地区：[1]江苏省先进金属材料重点实验室东南大学,材料科学与工程学院,南京211189 [2]东南大学张家港工业技术研究院,张家港215628

出　　处：《无机材料学报》2014年第2期149-154,共6页Journal of Inorganic Materials

基　　金：教育部新世纪优秀人才支持计划(NCET-12-0119);江苏省青蓝工程~~

摘　　要：利用高能真空微波辐照,仅以SiO2和人造石墨粉为原料,便捷快速地合成得到结晶良好的β-SiC晶粒。在利用各种表征手段综合分析SiC晶粒微观结构的基础上,确认高能微波辐照条件下,β-SiC晶粒的生长过程符合"光滑界面的二维形核生长"机制。借助于电子背散射衍射技术(EBSD)进行的原位解析发现,生长最快的{211}面在晶粒长大过程中逐渐被超覆,通过形成{421}过渡晶面而最终演变为{220}晶面,并成为晶粒的侧面;而生长最慢的{111}面则成为最后保留下来的六角形规则晶面。EBSD的解析结果为SiC晶粒生长过程中晶面演变提供了直接的实验证据。High-energy vacuum microwave irradiation was directly applied to synthesize silicon carbide （SIC）. Results indicated that the well-crystallized β-SIC grains can be obtained rapidly and conveniently via microwave approach, even simply constituents covering silica dioxide powders and artificial graphite were employed as raw materials. Based on the comprehensive micro-structural characterizations, the formation of β-SIC, under high-energy vacuum microwave irradiation, could be properly explained by the mechanism of two-dimension nucleation and growth. Besides, the technology of electron backscattered diffraction （EBSD） was particularly used to characterize the crystal plane of the observed SiC grains. The corresponding calculation of Euler angles suggested that the fastest-growing crystal planes {211 } should be overlapped gradually, and the evolution from {211 } to {220} crystal planes should be realized through the formation of {421} transformation plane. The most stable crystal planes of {111} became the regular hexagonal planes in the end, which can be explained by the Bravis rule. Correspondingly, the {220} crystal planes were finally existed as the side-planes of SiC grains. The detailed EBSD investigation provided the experimen- tal evidences for the evolution of crystal planes in the growth process.

关 键 词：微波 微米晶粒 碳化硅 生长机理 

分 类 号：TN304[电子电信—物理电子学]