高压PLD法生长p型钠掺杂氧化锌纳米线阵列  

p-type Sodium-doped Zinc Oxide Nanowire Arrays Grown by High-pressure Pulsed Laser Deposition

作　　者：邱智文[1] 杨晓朋[1] 韩军[1] 曾雪松[2] 李新化[2] 曹丙强[1] 

机构地区：[1]济南大学材料科学与工程学院,山东省高校无机功能材料重点实验室,济南250022 [2]中国科学院固体物理研究所,中国科学院材料物理重点实验室,合肥230031

出　　处：《无机材料学报》2014年第2期155-161,共7页Journal of Inorganic Materials

基　　金：国家自然科学基金(51002065;11174112);山东省泰山学者基金(TSHW20091007);山东省自然科学基金(BS2010CL003);教育部新世纪优秀人才支持计划(NCET-11-1027;213021A)~~

摘　　要：采用高压脉冲激光沉积法(HP-PLD)研究了压强、金催化层厚度对钠掺杂氧化锌纳米线(ZnO:Na)生长的影响,并制备了ZnO:Al薄膜/ZnO:Na纳米线阵列同质pn结器件。实验发现,当金膜厚度为4.2 nm,生长压强为3.33×104 Pa,生长温度为875℃时,可在单晶Si衬底上生长c轴取向性良好的ZnO纳米线阵列。X射线衍射和X射线光电子能谱综合分析证实了Na元素成功掺入ZnO纳米线晶格中。在低温(15 K)光致发光谱中,观测到了一系列由Na掺杂ZnO产生引起的受主光谱指纹特征,如中性受主束缚激子峰(3.356 eV,A0X)、导带电子到受主峰(3.312 eV,(e,A0))和施主受主对发光峰(3.233 eV,DAP)等。通过在ZnO:Al薄膜上生长ZnO:Na纳米线阵列形成同质结,测得I-V曲线具有明显的整流特性,证实了ZnO:Na纳米线具有良好的p型导电性能。Sodium-doped ZnO （ZnO：Na） nanowire arrays were grown with high-pressure pulsed laser deposition （HP-PLD）. The influence of growth pressure and thickness of gold catalyst layer on the growth of ZnO：Na nanowires were systemically studied. It is found that c-orientated ZnO nanowire arrays grow on single crystal silicon substrates under the optimized condition, e.g. gold catalyst layer＇s thickness of 4.2 nm, growth pressure of 3.33x 104 Pa and growth temperature of 875 ℃. X-ray diffraction pattern and X-ray photoelectron spectroscope analy- ses indicate that Na is introduced into ZnO nanowires successfully. Optical fingerprints of sodium-related acceptors in the low-temperature （15 K） photoluminescence spectrum are observed, such as neutral acceptor-bound exciton emission （3.356 eV, A0X）, free-electron to neutral-acceptor emission （3.312 eV, （e, A~））, and donor-to-acceptor pair emission （3.233 eV, DAP）. ZnO：Na nanowire arrays grown on ZnO：A1/sapphire substrates form the pn junction. The corresponding I-V curve measurements exhibit a clear rectifying behavior of pn homojunction, which further indicates that such ZnO：Na nanowire is of p-type conductivity.

关 键 词：钠掺杂 氧化锌纳米线 高压脉冲激光沉积(HP—PLD) 

分 类 号：TQ131[化学工程—无机化工] O472[理学—半导体物理]