铜对双靶共溅制备热电薄膜输运性能的影响(英文)  

Influence of Cu on Transport Properties of Thermoelectric Thin Film Fabricated via Magnetron Co-sputtering Method

作　　者：曹丽莉[1] 王瑶[1] 邓元[1] 罗炳威[1] 祝薇[1] 史永明[1] 林桢[1] 

机构地区：[1]特种功能材料与薄膜北京市重点实验室,北京航空航天大学材料学院,北京100191

出　　处：《无机材料学报》2014年第2期215-219,共5页Journal of Inorganic Materials

基　　金：National Natural Science Foundation of China(50772005,51002006);National High Technology Research and Development Program of China(2009AA03Z322);Funds for the Central Universities and Key Laboratory of Photochemical Conversion and Optoelectronic Materials,TIPC,CAS

摘　　要：采用双靶共溅法制备了铜掺杂的碲化铋锑热电薄膜,铜与碲化铋锑共溅的方法有利于形成沿c轴方向择优生长的碲化铋锑薄膜。结果表明,铜原子均匀的掺杂在碲化铋锑薄膜材料中。由于铜原子有利于提高载流子迁移率,薄膜材料的电导率随着铜掺杂比例的提高得到了极大的提升。当铜靶的溅射功率为20 W时,可以得到最高的电导率,同时功率因子的最佳值可提升到20μW/(cm·K2)。： A simple magnetron co-sputtering method was used to fabricate Cu dispersed Bi0.sSbl.sTe3 thin films, and the co-sputtering method was beneficial to the preferential growth of Bi0.5Sbl.5Te3 thin films along c-axis. Cu atoms were well-dispersed in the nano-structured materials. The electrical conductivity sharply increased with the increasing content of Cu due to the effect of Cu on transport property. For Cu target sputtering power of 20 W, a maximum power factor of 20μW/（cm.K2） with an electrical conductivity of 15 × 104 S/m at 355 K were achieved.

关 键 词：半导体 薄膜 热电性能 磁控溅射 

分 类 号：TB34[一般工业技术—材料科学与工程]