sol-gel法制备CuO掺杂的TiO_2厚膜及其气敏特性  

Preparation of the CuO-Doped TiO_2 Thick Film by Sol-Gel Method and Its Gas Sensing Properties

作　　者：张炳强[1] 潘国峰[1] 张培硕[1] 郭倩[1] 

机构地区：[1]河北工业大学微电子研究所,天津300130

出　　处：《微纳电子技术》2014年第2期83-88,104,共7页Micronanoelectronic Technology

基　　金：国家科技重大专项课题资助项目(2009ZX02308-004);国家自然科学基金资助项目(60972106)

摘　　要：采用溶胶凝胶法制备了纯TiO2和掺杂质量分数为5%,7%和9%CuO的TiO2纳米粉体,并对样品进行了不同温度(500,700和900℃)的退火处理。通过涂敷法制备成气敏元件,利用XRD和SEM对样品的结构和表面形貌进行了表征,并利用气敏测试系统检测其气敏特性。研究了CuO掺杂质量分数和退火温度对TiO2厚膜气敏性能的影响,进一步讨论了TiO2厚膜的气敏机理。结果表明:CuO的掺杂有效抑制了TiO2晶粒的生长,增加了对光子的利用率,降低了工作温度,提高了气敏特性。700℃退火后,质量分数为7%的CuO掺杂TiO2样品的结晶尺寸达到14.5 nm,气敏元件表现出对丙酮蒸汽单一的选择性,灵敏度为3 567,响应和恢复时间均为2 s。Abstract： The pure TiO2 and the CuO-doped TiO2 nanopowders with the mass fractions of 5%, 7% and 9% were prepared by the sol-gel method, and the samples were annealed at different tem- peratures （500, 700 and 900 ℃）. The gas sensors were obtained with the coating method. The structures and surface morphologies of the samples were characterized by X-ray diffration （XRD） and scanning electron microscope （SEM）, and the gas sensing properties were detected by the gas sensor test system. The effects of the CuO-doped mass fraction and annealing temperature on the gas sensing properties of TiO2 thick films were studied. Meanwhile, the gas-sensing mecha- nism of TiO2 thick films was discussed. The results indicate that the doping of CuO can effective- ly restrain the growth of TiO2 grains, increase the utilization of the photon, reduce the operating temperature and improve the gas sensing properties. The crystalline size of the CuO-doped TiO2 sample with the mass fraction of 7% reaches 14.5 nm after the anneal at 700 ℃. The gas sensor behaves the single selectivity to the acetone steam, the sensitivity can be up to 3 567, and both the response and recovery time are 2 s.

关 键 词：TiO2厚膜 溶胶凝胶法 气体传感器 CuO掺杂 退火温度 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]