平面型大光敏元InGaAs线列探测器及其应用  

Planar-Type InGaAs Linear Detectors with Large Element for SWIR Imaging

作　　者：邵秀梅[1,2] 李淘[1,2] 李雪[1,2] 邓洪海[1,2] 程吉凤[1,2] 徐勤飞[1,2] 肖功海[2] 汪洋[1,2] 陆华杰[1,2] 

机构地区：[1]中国科学院上海技术物理研究所传感技术国家重点实验室,上海200083 [2]中国科学院红外成像材料与器件重点实验室,上海200083

出　　处：《光学与光电技术》2014年第1期75-79,共5页Optics & Optoelectronic Technology

基　　金：国家重点基础研究发展计划(973计划2012CB619200);国家自然科学基金(6137052)资助项目

摘　　要：采用晶格匹配的平面型InP/In0.53Ga0.47As/InP外延材料,设计了一种大光敏元、带有保护环的InGaAs线列探测器。通过I-V测试、扫描电容显微技术(SCM)测试,研究并确定了线列器件的盲元与保护环结构之间的关系。通过设计改进,解决了器件的盲元问题。24×1InGaAs线列短波红外探测在室温20℃、-10mV偏压下,暗电流密度约5nA/cm2。将光敏芯片密封在集成了热电制冷器(TEC)的金属管壳内,组件工作温度5℃,探测器响应光谱在1.0μm^1.67μm范围,平均峰值电流响应率为1.3A/W,平均峰值探测率为3.4×1012 cm·Hz1/2/W,响应的非均匀性为1.5%。探测器经历一定条件的可靠性筛选试验后,性能未发生明显变化,并进行了航空机载成像应用,成像图片清晰。A planar-type InGaAs linear detector with guard-ring structure and large element is designed based on InP/In0. 53Ga0.47As/InP, which is lattice-matched to InP substrate. The I-V characteristics arid scanning capacitance microscopy （SCM） results make sure that the bad elements have relation to the structure of the guard-ring. Then, the structure of the guard-ring is optimized, and the problem about bad elements are solved. The dark current dehsity is about 5 nA/cm2 at -10 mV, 20 ~C. The chip is sealed in metal package with thermal electrical cooler （TEC）. At the temperature of 5 ℃, the rela- tive spectral response is in the range of 1.0μm to 1.67μm, The mean peak responsivity is 1.3 A/W and the mean peak de- tectivity is 3. 4×1012 cm Hzl/2/W. The response non-uniformity is about 1.5N. The performance of the detector does not change after several reliable experiments. At last, the detector is used to a scanning system with good image.

关 键 词：INGAAS探测器 平面型 盲元 

分 类 号：TN215[电子电信—物理电子学]