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作 者:袁海斌[1] Joseph FABRE Philippe LADOUX Michel PITON
机构地区:[1]北京航空航天大学自动化科学与电气工程学院 [2]ALSTOM Transport-Innovation and Research-Traction Components Engineering Rue du Docteur Guinier-BP4-65601 Séméac-France [3]UNIVERSITE de TOULOUSE-Laboratoire Plasma et Conversion d’ Energie Rue Charles Camichel-BP7122-31071 Toulouse Cedex 7-France
出 处:《电源世界》2013年第12期48-52,35,共6页The World of Power Supply
摘 要:SI基IGBT广泛的应用于铁路牵引变换器上,而在不远的将来,SiC将有望在三个方面突破开关器件的极限:高闭锁电压,高工作温度和高开关速度。如今,第一代SiC MOSFET模块已经在市场出现,并且前景很好。虽然仍旧受限于击穿电压,但这种大间隙器件还是会提高牵引链效率。特别是有望能够明显的降低开关损失,从而能够提高功率重量比。IGBT based on Si is widely used in railway traction converter. In the near future, SiC is expected to push the limit of switch device-high blocking voltage, high operating temperature and high switching speed. Nowadays, the first generation of SiC MOSFET module has turned up in the market with good prospects. Although restricted by the breakdown voltage, this large-clearance device can improve the efficiency of traction chain, especially hopeful to reduce the switching loss obviously and improve the power-weight ratio.
分 类 号:TN86[电子电信—信息与通信工程]
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