薄膜压电系数测量方法的研究进展  

Research Progress of Measuring Methods for the Thin Film Piezoelectric Coefficient

作　　者：董佳丽[1] 相文峰[1] 赵昆[1] 岳义[1] 贺卓[1] 赵嵩卿[1] 

机构地区：[1]中国石油大学理学院,北京102249

出　　处：《微纳电子技术》2014年第1期59-65,共7页Micronanoelectronic Technology

基　　金：国家自然科学基金资助项目(11004251);中国石油大学(北京)科研启动基金资助项目(01JB0021);北京市青年英才计划资助项目

摘　　要：基于国内外对于薄膜压电系数的研究成果,系统地综述了薄膜压电系数的测量方法,如正向压力法、圆片弯曲法、激光干涉法、悬臂梁法和显微镜法等,并对这些方法的基本原理、测试表征、应用状况及存在的问题进行了详细的分析,同时比较了这些方法的优缺点。传统的测量方法,如正向压力法、圆片弯曲法和悬臂梁法等已经遇到了技术瓶颈,难以得到根本性的优化;而高分辨率的激光干涉法和显微镜法测量方便、可靠,与其他技术相结合有望成为表征薄膜压电系数的标准方法。Based on the research results of the thin film piezoelectric coefficient both at home and abroad, the measuring methods for the thin film piezoelectric coefficient are systematically sum- marized, such as the positive pressure method, wafer flexure method, laser interferometry, cantilever beam method and microscopic method and so on. The basic principle, measurement characterization, application status and existing problems of these methods are analyzed in detail, and the advantages and disadvantages of these methods are also compared. The traditional measurement methods such as the positive pressure method, wafer flexure method and cantilever beam method have met the technical bottleneck, it is difficult for these methods to get fundamental optimization. High resolution laser interferometry method and microscopic method are more convenient and reliable, these methods combining with other technologies are expected to become the standard methods of thin film piezoelectric coefficient characterization.

关 键 词：压电系数 压电薄膜 测试方法 正压电效应 逆压电效应 

分 类 号：TN304.07[电子电信—物理电子学]