ZnO缓冲层的厚度对HVPE-GaN外延层的影响  

Effects of the Thickness of ZnO Buffer Layers on the HVPE-GaN Epitaxial Layer

作　　者：王晓翠[1] 杨瑞霞[1] 王如[1] 张嵩[2] 任光远[1] 

机构地区：[1]河北工业大学信息工程学院,天津300401 [2]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《微纳电子技术》2014年第1期66-70,共5页Micronanoelectronic Technology

摘　　要：为了得到高质量的GaN材料,首先在c面蓝宝石(Al2O3)衬底上射频磁控溅射不同厚度的ZnO缓冲层,然后采用氢化物气相外延(HVPE)法在ZnO缓冲层上生长约5.2μm厚的GaN外延层,研究ZnO缓冲层的厚度对GaN外延层质量的影响。用微分干涉显微镜(DIC)、扫描电子显微镜(SEM)、X射线衍射(XRD)和光致发光(PL)技术研究分析了GaN外延层的表面形貌、结晶质量和光学特性。结果表明,ZnO缓冲层的厚度对GaN外延层的特性有着重要的影响,200 nm厚的ZnO缓冲层最有利于高质量GaN外延层的生长。For obtaining the high quality GaN material, the ZnO buffer layers with different thicknesses were prepared firstly on c-plane sapphire （Al2O3） by the radio frequency magnetron sputtering system, then the GaN epitaxial layer with the thickness about 5.2 μm was deposited on the ZnO buffer layers by the hydride vapor phase epitaxy （HVPE） method. The effect of the ZnO buffer layer thickness on the quality of GaN epitaxial layer was analyzed. The surface morphology, crystalline quality and optical property of the GaN epitaxial layer were studied and analyzed through the differential interference microscope （DIC）, scanning electron microscope （SEM）, X-ray diffraction （XRD） and photoluminescence （PL） technology. The results show that the thickness of ZnO buffer layer has an important influence on the properties of GaN epitaxial layers, and ZnO buffer layer with the thickness of 200 nm is most beneficial to the growth of high quality GaN epitaxial layers.

关 键 词：氢化物气相外延(HVPE) 氮化镓(GaN) ZnO缓冲层 蓝宝石 磁控溅射 

分 类 号：TN304.054[电子电信—物理电子学] TN304.23