半导体激光器电极制备中的蒸发技术  

Evaporation techniques in making electrodes of semiconductor lasers

作　　者：王玉霞[1] 王晓华[1] 李辉[1] 

机构地区：[1]长春光机学院高功率半导体激光国家重点实验室,吉林长春130022

出　　处：《半导体技术》2001年第2期54-55,共2页Semiconductor Technology

基　　金：863项目![863-307-03-01(06)]

摘　　要：介绍了半导体激光器电极的蒸发技术。改进了焊接技术即蒸铟技术，并对使用的铟量、铟的厚度、蒸发电流、蒸发源与被蒸镀的电极之间的距离及铟表面的均匀度进行了实验。最后蒸发出了表面均匀、有金属光泽、厚度合适的理想电极。An evaporation technique of making electrodes of semiconductor lasers is presented in this paper. Some important experiments such as the amount of indium, the thickness, evaporation current, the distance between source and electrodes being evaporated, and homogeneity of In surface have been repeatedly done. Finally the ideal electrodes with homogeneous and brilliant surface, and appropriate thickness have been evaporated.

关 键 词：蒸发技术 电极蒸铟 半导体激光器 

分 类 号：TN248.405[电子电信—物理电子学]