E/D GaAs PHEMT多功能MMIC设计  

Design of E/D GaAs PHEMT Multi-function MMIC

作　　者：刘石生[1] 彭龙新[1] 潘晓枫[1] 沈宏昌[1] 

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2014年第1期29-34,40,共7页Research & Progress of SSE

摘　　要：基于E/D GaAs赝配高电子迁移率晶体管(PHEMT)工艺研制了Ku波段多功能MMIC芯片。该MMIC集成了数字驱动器和微波电路,内含6bit数控移相器、6bit数控衰减器、3个低噪声放大器、4个数控单刀双掷开关、多个TTL数字驱动器。其中两个低噪声放大器采用了电流复用技术,总直流功耗小于275mW,实现了节能。测试结果表明:发射支路增益大于2dB,输出P1dB大于9dBm;接收支路增益大于10dB,输出P1dB大于7dBm,噪声系数小于8dB。相对移相误差均方根值(RMS)在发射和接收模式下均小于6°,附加调幅小于1.5dB;衰减误差RMS小于0.7dB,附加调相小于4°。A Ku-band multi-function MMIC （MFC） is developed and tested based on 0.25μm E/D GaAs PHEMT process. The digital and microwave circuits are integrated in the MFC, which contains three low noise amplifiers, a 6 bit digitally controlled phase shifter , a 6 bit digit- ally controlled attenuator, four SPDTs and several digital drivers. Two LNAs in the MFC em- ploy the current reuse mode, so the DC power consumption is less than 275 mW, realizing the aim of energy-saving. The test results show that, in transmitting mode, the measured gain is more than 2 dB,and the PldB is more than 9 dBm;while in receiving mode, the gain is more than 10 dB and the P1dB is more than 7 dBm. The root mean square （RMS） phase and amplitude errors in the two working modes are less than 6° and 1.5 dB over all phase setting, reapectively. Over all at- tenuator setting ,the RMS phase and amplitude errors are less than 4° and 0.7 dB separately.

关 键 词：数字微波集成多功能单片电路 数控移相器 数控衰减器 数字驱动器 

分 类 号：TN45[电子电信—微电子学与固体电子学] TN432