A novel NLDMOS with a high ballast resistance for ESD protection  

作　　者：樊航 张波 

机构地区：[1]State Key Laboratory of Electronic Thin Film and Integrated Devices,University of Electronic Science and Technology of China

出　　处：《Journal of Semiconductors》2014年第2期47-50,共4页半导体学报（英文版）

基　　金：Project supported by the Important National S&T Special Project of China(No.2010ZX02201-003-002)

摘　　要：To prevent the non-uniform conduction phenomenon caused by the Kirk effect in an NLDMOS under ESD stress, a novel NLDMOS structure is proposed. High electron injection current is the base of Kirk effect. Higher electron injection can makes the Kirk effect more serious and lead easily to the non-uniform conduction phenomenon. By splitting the drain N＋ with the field oxide in the proposed structure, the crowded current can lead to a higher voltage drop on the ballast resistance. Therefore, the non-uniform conduction is suppressed, and its failure current is much improved.To prevent the non-uniform conduction phenomenon caused by the Kirk effect in an NLDMOS under ESD stress, a novel NLDMOS structure is proposed. High electron injection current is the base of Kirk effect. Higher electron injection can makes the Kirk effect more serious and lead easily to the non-uniform conduction phenomenon. By splitting the drain N＋ with the field oxide in the proposed structure, the crowded current can lead to a higher voltage drop on the ballast resistance. Therefore, the non-uniform conduction is suppressed, and its failure current is much improved.

关 键 词：electro-static discharge ballast resistance LDMOS 

分 类 号：TN386[电子电信—物理电子学]