柔性电子用NiW薄片上ZCO异质外延生长(英文)  

Heteroepitaxial growth of Zr-doped CeO_2 films on NiW foils for flexible electronics

作　　者：赵静[1] 

机构地区：[1]中国电子科技集团公司第十五研究所,北京100083

出　　处：《电子元件与材料》2014年第3期24-26,共3页Electronic Components And Materials

摘　　要：低成本柔性金属薄片上的异质外延氧化铈薄膜的潜在应用领域有固体燃料电池、气体传感器和光学器件等。利用直流反应磁控溅射法在双轴织构NiW合金衬底上进行Zr掺杂氧化铈薄膜的外延生长研究。结果表明,不同Zr掺杂量的薄膜可通过调制Zr靶上的溅射功率获取,所有样品均为c轴垂直于基片表面生长,显示出良好的外延特性。原子力显微镜分析结果表明,样品表面连续、致密、无裂纹。电子背散射衍射图谱显示Zr0.32Ce0.68O1.84膜具有良好的四重对称面内织构。Heteroepitaxial growth of CeO2 films on low-cost, flexible metal foil is a potential route to be applied in solid oxide fuel cells, gas sensors and optical devices, etc. The epitaxial growth of Zr-doped CeO2 films on biaxially-textured NiW foils with direct-current （DC） reactive magnetron sputtering was investigated. It is confirmed that the films with different doping amounts of Zr could be obtained with modulating the sputtering power of Zr target. All samples exhibit good epitaxial growth with c-axis perpendicular to the substrate surface. Atomic force microscope reveals a continuous, dense, and crack-free surface morphology. Surface phase and texture analysis by an electron backscattering diffraction technique reveal that Zr0.32Ce0.68O1.84 film exhibits good in-plane texture with four-fold symmetry.

关 键 词：Zr掺杂氧化铈 薄膜 异质外延 柔性电子 溅射法 面内织构 

分 类 号：TN604[电子电信—电路与系统]