气相沉积聚酰亚胺在微型电子器件中的应用  

Vapor deposition polymerized polyimide thin films for miniaturized electronic devices

作　　者：褚夫同[1] 王乔升 戴丽萍[1] 刘兴钊[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《电子元件与材料》2014年第3期27-30,共4页Electronic Components And Materials

基　　金：教育部博士点基金资助项目(No.2012018530003)

摘　　要：采用气相沉积聚合法制备了聚酰亚胺(PI)薄膜及PI与金属颗粒(Cr)复合(PI/Cr)薄膜,所制备PI薄膜表面平整,随着金属颗粒体积百分数增加,PI/Cr薄膜介电常数逐渐增大;当将PI薄膜应用于压电微机械超声换能器(pMUTs)中时,pMUTs机电耦合系数显著提高,所研制pMUTs在光声成像演示中探测到了较强的光声信号;当将PI/Cr薄膜应用于AlGaN/GaN高电子迁移率场效应晶体管(HEMTs)中时,HEMTs的击穿电压由156 V提高到248 V,HEMTs器件的耐压能力显著改善。The polyimide （PI） thin films with smooth surface and polyimide/chromium （PI/Cr） composite thin films with high permittivity were prepared by vapor deposition polymerization （VDP）. The piezoelectric micro-machined ultrasonic transducers （pMUTs） were fabricated by covering the PI thin films as acoustic impedance matching layer. And the A1GaN/GaN high-electron-mobility transistors （HEMTs） were fabricated by using high permittivity PI/Cr composite thin film as passivation layer. The electromechanical coupling coefficient of pMUTs is improved by introducing the PI layers, and the prepared pMUTs show good performance for photo-acoustic imaging. The breakdown voltage of the HEMTs increases from 156 V to 248 V by using the PI/Cr thin film dielectric field plate while maintaining high performance.

关 键 词：气相沉积聚合 聚酰亚胺 薄膜 高介电常数介质 压电微机械超声换能器 高电子迁移率场效应晶体管 

分 类 号：TM215[一般工业技术—材料科学与工程]