沉积温度对 Cu2O 薄膜生长过程及光电性能的影响(英文)  

Influence of Deposition Temperature on Growth Process and Opto-electronic Performance of Cu_2O Thin Films

作　　者：董金矿 徐海燕[1] 陈琛[1] 

机构地区：[1]安徽建筑大学材料与化学工程学院,合肥230022

出　　处：《无机化学学报》2014年第3期689-695,共7页Chinese Journal of Inorganic Chemistry

基　　金：国家自然科学基金(No.20901001);教育部(No.2011075);安徽省教育厅(No.KJ2009B133)资助项目

摘　　要：以硫酸铜为铜源，采用一步化学浴沉积法制备出了晶粒尺寸可调的纳米晶Cu2O薄膜。通过X射线衍射、扫描电镜和紫外可见分光光度法研究了沉积温度对薄膜晶体结构、成核密度、晶粒尺寸、薄膜厚度和光电性能的影响。结果表明，当在60~90 ℃范围内调节温度时，能够很好地控制晶粒尺寸、薄膜厚度，并将禁带宽度控制在33~51 nm、392~556 nm和2.47~2.61 eV范围内；随着晶粒尺寸的减小，紫外可见光谱的吸收边有明显的蓝移。此外还对薄膜的生长过程，成核密度和颗粒尺寸变化的机理进行了讨论。The nanocrystallite cuprous oxide （Cu2O） thin films with tunable crystallite size were prepared by a one-step chemical bath deposition （CBD） method, where copper sulfate was used as the copper precursor. The influence of deposition temperature on structure, crystallite size, nucleation site density, film thickness and opto-electronic properties of the thin films was investigated by X-ray diffraction （XRD）, scanning electron microscopy （SEM） and UV-Vis spectroscopy. The results reveal that the crystallite size, film thickness and band gap of Cu2O thin films vary in the range of 33~51 nm, 392~556 nm and 2.47~2.61 eV, respectively, with the deposition temperature change in the range of 60~90 ℃. In addition, the absorption edges of UV-Vis transmittance spectra are blue-shifted apparently with the decrease in crystallite size. Meanwhile, the growth process and the mechanism for the varied nucleation site density and particle size of Cu2O thin films were also discussed.

关 键 词：Cu2O薄膜 沉积温度 晶粒尺寸 成核密度 禁带宽度 

分 类 号：O611.6[理学—无机化学]