CZ法制备单晶硅相变界面形状演变及控制研究  

STUDY ON SOLID-LIQUID INTERFACE SHAPE EVOLUTION AND CONTROL OF CZ MONO-CRYSTALLINE SILICON GROWTH

作　　者：姜雷[1] 刘丁[1] 赵跃[1] 焦尚彬[1] 

机构地区：[1]西安理工大学国家联合晶体生长设备及系统集成工程研究中心,西安710048

出　　处：《太阳能学报》2014年第2期247-252,共6页Acta Energiae Solaris Sinica

基　　金：国家科技重大专项(2009ZX02011001);教育部科学技术研究重点项目(2012k0169)

摘　　要：建立描述CZ-Si系统中动量、热量和质量同时传递,且流固耦合的模型,数值模拟CZ法制备单晶硅等径过程中在热传导、热对流等因素耦合作用下的固液相变问题,给出相变界面形状的演变过程。计算结果表明,等径前期和中期相变界面形状变化主要是由于晶体散热的改变,后期则是由于熔体中自然对流和强迫对流关系的反转。从全局的角度分析改善界面形状的控制方法,提出变晶转制备工艺。A simulation model of CZ-Si system was set up to analyze simultaneous transfer of momentum, energy and mass and fluid-solid coupling. The solid-liquid phase change under coupling action of heat conduction, convection and other factors was analyzed by numerical simulation in the process of CZ-Si rod growth. The evolution of solid-liquid interface shape for different rod length was given. The results show that the early and mid interface shape changes of rod growths are due to thermal dissipation of the interface, the latter is due to reversal between natural convection and forced convection in the melt. There is a global analysis for advanced solid-liquid interface control. At last, crystal growth process adjusting crystal rotation is proposed.

关 键 词：固液界面 数值模拟 直拉法 单晶硅 

分 类 号：O78[理学—晶体学]