机械刻槽深埋电极太阳电池中二氧化硅层的制备  

Preparation of Silicondioxide in Mechanically Grooved Buried Contact Solar Cell

作　　者：郜小勇[1] 卢景霄[1] 李维强[1] 

机构地区：[1]郑州大学物理工程学院,郑州450052

出　　处：《郑州大学学报（自然科学版）》2000年第4期43-45,共3页Journal of Zhengzhou University (Natural Science)

基　　金：河南省自然科学基金资助项目.

摘　　要：结合实验室制备机械刻槽深埋电极太阳电池的工艺过程及实验结果 ,给出二氧化硅层参数的最佳设计及制备方法 .实验结果表明 ,10 0 0℃氧化温度下采用干 -湿 -干氧化法 ,经过 70分钟可生长 35 0 nm～45 0 nm厚的二氧化硅层 .这不仅大大缩短了高温氧化时间 ,降低了生产成本 。According to the process of the mechanically grooved buried contact solar cell and the results of the experiments, the optimized parameter design and the preparation of silicon oxide are given. The experiment proves that the silicon dioxide layer of the thickness between 350mm and 450mm is grown with thermal oxidation method of dry oxidation wet oxidation dry oxidation process, at T =1 000℃ and t =70min. The time of thermal oxidation is greatly shorten and the production cost is lowered. The requirement of the device and the process in the quality and thickness of the silicon oxide is met as well.

关 键 词：机械刻槽 深埋电极 太阳电池 分凝系数 掩蔽层 二氧化硅 

分 类 号：TM914.41[电气工程—电力电子与电力传动]