(001)取向TiO_2薄膜水热生长机理及其忆阻性能  

Hydrothermal Growth Mechanism of Oriented TiO_2 Films and the Resistive Switching Properties

作　　者：陈宝龙[1] 武卫兵[1] 陈晓东[1] 张楠楠[1] 

机构地区：[1]济南大学材料科学与工程学院,山东济南250022

出　　处：《山东化工》2014年第2期1-4,共4页Shandong Chemical Industry

基　　金：国家自然科学学基金(No.50802035);山东省自然科学基金重点项目(No.ZR2010EZ003)

摘　　要：通过氟基水热法合成出(001)取向的锐钛矿TiO2薄膜,讨论了薄膜的生长机理和忆阻性能。水热生长结果表明,预沉积无定形种子层增加了薄膜致密度,氟离子选择吸附促使TiO2薄膜的取向生长。薄膜的忆阻特性检测表明,(001)取向的TiO2薄膜忆阻单元具有良好的开关特性,稳定性良好。氟基水热法制备TiO2薄膜,设备和工艺简单,成本低,在忆阻器领域会有很好的应用潜力。Highly （001） -ofiemed TiO2 thin films were synthesized via F- based hydrothermal method, the growth mechanism and RRAM properties were discussed. Analysis showed that the pre - deposited amorphous seed layers increases the density, the adsorption of F - induced the oriemation of TiO2 in （001） direction. Performance tests demonstrated that the RRAM cell composed of the oriented TiO2 film showed nice resistance switching characteristics and good retention. The low production cost of the F - based hydrothermal method would make the oriented TiO2 film have potential application in the RRAM field.

关 键 词：TIO2 取向 水热合成 RRAM 

分 类 号：O782.1[理学—晶体学]