Properties of p-type ZnO thin films with different orientations  

作　　者：戴丽萍 王姝娅 钟志亲 张国俊 

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China

出　　处：《Optoelectronics Letters》2014年第2期111-114,共4页光电子快报（英文版）

基　　金：supported by the National Natural Science Foundation of China(No.61204088);the Fundamental Research Funds for the Central Universities(No.ZYGX2011J029)

摘　　要：The stable properties of N-doped p-type ZnO thin films with preferential nonpolar(100) plane orientation relative to polar(002) plane orientation are investigated. The two kinds of oriented thin films are fabricated by the methods of post heat treatment and double sources in situ, respectively. The Hall investigations demonstrate that N-doped p-type ZnO thin films with preferential nonpolar(100) plane orientation are more stable,and the results are also proved by build-in electric field model and electronic structure calculations of the films based on the first principle.The stable properties of N-doped p-type ZnO thin films with preferential nonpolar （100） plane orientation relative to polar （002） plane orientation are investigated. The two kinds of oriented thin films are fabricated by the methods of post heat treatment and double sources in situ, respectively. The Hall investigations demonstrate that N-doped p-type ZnO thin films with preferential nonpolar （100） plane orientation are more stable, and the results are also proved by build-in electric field model and electronic structure calculations of the films based on the first orinciple.

关 键 词：P型ZNO薄膜 取向薄膜 性质 稳定性能 非极性 后热处理 结构计算 电场模型 

分 类 号：TN304.21[电子电信—物理电子学]