类电磁诱导透明效应在硅基微环谐振腔中的实现与优化  

Electromagnetically Induced Transparency-like Effect in the Optimized Silicon Micro Ring Resonators

作　　者：王永华[1] 韦丽萍[1] 臧俊斌[2] 崔丹凤[1] 李艳娜[1] 刘耀英[1] 薛晨阳[1,3] 

机构地区：[1]中北大学仪器科学与动态测试教育部重点实验室,太原030051 [2]中北大学朔州校区,山西朔州036000 [3]中北大学电子测试技术国家重点实验室,太原030051

出　　处：《光子学报》2014年第2期28-32,共5页Acta Photonica Sinica

基　　金：国家自然科学基金(No.61076111);山西省科技厅(No.2011011013-2)资助

摘　　要：为在硅基光波导上实现类电磁诱导透明效应,设计并加工了基于绝缘体上硅的串联双环结构.通过300℃到1 200℃热氧化退火、缓冲刻蚀液湿法腐蚀以及1 000℃高温氮气退火等波导结构的后期处理,利用垂直光栅耦合的方式输入及输出信号,观测到了类电磁诱导透明效应.分析了两环间不同间距对类电磁诱导透明效应的影响,结果表明:工艺中单环Q值达到5.1×104,类电磁诱导透明效应透明峰的带宽约为500MHz.To realize the electromagnetically induced transparency-like effect on the silicon waveguide, a double ring resonators structure based on silicon-on-insulator was designed and fabricated. By post processing of thermal oxidation annealing under the temperature from 300 ℃ to 1 200 ℃, wet chemical etching with buffered oxide etch and N2 annealing under the temperature of 1 000 ℃, the electromagnetieally induced transparency-like curve via the vertical grating coupling method was observed. The effect of different distance between the two resonators to the electromagnetically induced transparency-like curve was analyzed. The Q factor of a single ring in this fabrication was 5.1 X 10^4. measured spectral width of the transparency window was as narrow as 500 MHz.

关 键 词：集成光学 硅基光波导 热氧化退火 垂直光栅耦合 类电磁诱导透明 微环谐振腔 绝缘体上硅 

分 类 号：TN252[电子电信—物理电子学]