功率VDMOS热阻的温度系数特性研究  

Study on Temperature Coefficient Characteristics of Thermal Resistance for Power VDMOS

作　　者：董晨曦[1] 王立新[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《微电子学》2014年第1期110-114,共5页Microelectronics

摘　　要：对功率VDMOS源漏间寄生PN结正向结电压VDS随温度变化的特性进行了测量,发现VDS与结温T存在良好的线性关系,通过理论推导进行了分析验证。同时发现,温度系数α=dVDS/dT与测试电流IF满足指数关系;且VDS-T线性曲线在不同的IF下具有聚焦特性,即在绝对零度时,不同IF下的VDS具有相同的值。经过对试验点的拟合分析,得到新的VDS表达式,很好地解释了VDS-T曲线与IF的关系及其在不同IF下的聚焦特性。该研究有利于实现结温的精确测量,保证热阻测试结果更加准确可靠,为器件的热特性分析提供强有力的依据。Temperature characteristics of power VDMOS was investigated. It has been found that its drain-source voltage was linearly related with junction temperature, which was verified by theoretical calculation. It was also found that temperature coefficient α= dVDs/dT and test current IF satisfied exponential relationship, and forward variation of voltage with junction temperature （VDs-T curve） had a focus feature for different test currents, e.g. for T = 0 K, the same value was obtained for all VDs at different test currents. Through regression with experiment values, a new Vm expression was obtained, which better explained the relationship of VDs-T curve with Iv, and the focus feature at different test currents. This work is helpful for precise measurement of junction temperature, so as to provide more accurate and reliable data for thermal analysis of power device.

关 键 词：功率器件 热阻 温度系数 电学法 PN结 

分 类 号：TN386.1[电子电信—物理电子学]