集成电路单粒子瞬态效应与测试方法  

Single Event Transients in Integrated Circuits and Test Methods

作　　者：刘健波[1,2] 刘远[1,2] 恩云飞[2] 雷志锋[2] 王晓晗[2] 杨元政[1] 

机构地区：[1]广东工业大学材料与能源学院,广州510006 [2]工业和信息化部电子第五研究所电子元器件可靠性物理及其应用技术重点实验室,广州510610

出　　处：《微电子学》2014年第1期135-140,共6页Microelectronics

基　　金：国家自然科学基金资助项目(61204112);中国博士后科学基金资助项目(2012M521628)

摘　　要：随着器件尺寸的等比例缩小,单粒子瞬态效应对集成电路的影响愈发明显,其产生机理及作用更加复杂。从集成电路单粒子瞬态脉冲的产生机理及模型出发,讨论分析了模拟和数字集成电路的单粒子瞬态效应,介绍了单粒子瞬态脉冲宽度的测试方法与测试结构。With dimensional scaling of semiconductor devices, single event transient is becoming one of the most important threats to integrated circuits used in space environments. Single event transients in analog and digital integrated circuits were analyzed based on generation mechanism of single event transient pulse in IC s and its physical models. Methods for testing pulse w.idth of single event transient in integrated circuits and its test structures were discussed.

关 键 词：单粒子效应 单粒子瞬态效应 自测试结构 

分 类 号：TN406[电子电信—微电子学与固体电子学]