纳米-微米复合图形化衬底及其在半导体异质外延上的应用  

Study of nano-micrometer hybrid patterned substrates and their applications in semiconductor heteroepitaxy

作　　者：郭雄彬 方旭[2] 傅建新 许坚[2] 叶辉[2] 

机构地区：[1]浙江省能源与核技术应用研究院,浙江杭州310012 [2]浙江大学现代光学仪器国家重点实验室,浙江杭州310027

出　　处：《光学仪器》2014年第1期20-24,35,共6页Optical Instruments

基　　金：浙江省科技计划(2011F20021);浙江省自然科学基金资助项目(LZ12F04002)

摘　　要：报道了一种新型的纳米-微米复合的蓝宝石图形化衬底,采用dip-coating的方法在微米级SiO2半球阵列表面静电自组装一层SiO2纳米球,形成了适合纳米范围选择性生长的区域。研究发现,该复合结构的制备过程与后续外延的工艺兼容。经封装后,在复合图形衬底上制造的LED芯片,其所测试的光通量比未添加SiO2纳米颗粒的微米图形衬底制造的LED光通量提高57%左右,而光输出功率则提高了17.8%。研究表明,在传统的微米图形衬底上加入SiO2纳米颗粒阵列不仅能够提供纳米级区域外延生长的模板,有效减少外延层的线位错密度,而且能够进一步粗化衬底表面,增加有源层光线逸出的几率,从而有效地提高了光提取效率。A novel nano-micrometer hybrid patterned substrates was reported for GaN hetero-epitaxial growth by static self-assembly of nanoscale SiO2 particles on micrometer patterned sapphire substrates with dip-coating process.Such self-assembly process will have no influence on the subsequent epitaxial process.After encapsulating the chips,the luminous flux of the LED fabricated on hybrid patterned substrates was found to be 57％ increase compared to that on micrometer patterned substrates,and the output optical power had a 17.8％ increment.The research results show that nanoscale SiO2 particles can not only provide the template for selective epitaxial growth,resulting in decrement of the dislocation density,but also roughen the substrates surface to increase the probability of light escape,resulting in increment of light emission efficiency.

关 键 词：图形衬底 提拉法 SiO2纳米颗粒 光提取效率 外延生长 

分 类 号：TN383.1[电子电信—物理电子学]