300mm晶圆化学机械抛光机关键技术研究与实现  

Research and Implementation on Critical Technology of Chemical Mechanical Polishing Tool for 300 mm Wafer

作　　者：王同庆[1] 路新春[1] 赵德文[1] 门延武[1] 何永勇[1] 

机构地区：[1]清华大学摩擦学国家重点实验室,北京100084

出　　处：《机械工程学报》2014年第5期182-187,共6页Journal of Mechanical Engineering

基　　金：创新研究群体科学基金(51021064);国家自然科学基金(51205226);中国博士后科学基金(2012M510420)资助项目

摘　　要：在芯片微细化和互连多层化趋势下,化学机械抛光(Chemical mechanical polishing,CMP)成为集成电路制造的核心技术。针对300 mm晶圆CMP装备被极少数国外厂家垄断、国内300 mm晶圆CMP装备水平远远落后的现状,开展300 mm晶圆CMP装备关键技术研究。研制出300 mm晶圆多区压力抛光头及其压力控制系统,该抛光头具有多区压力、浮动保持环及真空吸附等功能,每个腔室均可实现施加正压、抽负压、通大气和泄漏检测;压力控制系统性能测试结果表明,该系统可实现689.5 Pa的超低压力,其精度和响应速度均能满足常规压力及超低压力CMP的要求;开发了300 mm晶圆超低压力CMP样机,创建出一套比较稳定、可靠的工艺流程,并利用该样机初步开展铜CMP试验研究。试验结果表明:抛光压力为15.169 kPa时,材料去除率达671.3 nm/min,片内非均匀性为3.93%。As the feature size scales down and the implementation of multilevel metallization, chemical mechanical polishing （CMP） has become one of the most important technologies in the ultra-large-scale integrated circuits manufacturing. However, the 300 mm wafer CMP tool is being increasingly monopolized by only a few foreign companies, and therefore the research level of 300 mm wafer CMP in our country is far behind other countries such as U.S., Japan, and South Korea. The critical technology of the 300 mm wafer CMP tool is studied. Firstly a 300 mm wafer multi-zone polishing head with pressure control system is developed, vacuum chuck and floating retainer ring are also available in the polishing head. And then the static and dynamic performance of the closed-loop pressure control system is tested. Finally a 300 mm wafer CMP tool is developed, and the 300 mm wafer CMP process flow is developed, improved, and optimized, which establishes the foundation for experimental research. The experimental results show that a material removal rate of 671.3 nm/min, and a within wafer non-uniformity of 3.93 % can be realized by the developed

关 键 词：300 mm晶圆 抛光头 多区压力 超低压力 化学机械抛光 

分 类 号：TH117[机械工程—机械设计及理论]