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作 者:尹聪[1,2] 谢丹 徐建龙[1,2] 任天令[1,2]
机构地区:[1]清华大学微电子学研究所,北京100084 [2]清华大学清华信息科学与技术国家实验室,北京100084
出 处:《无机材料学报》2014年第3期331-336,共6页Journal of Inorganic Materials
基 金:National Natural Science Foundation of China(61025021,60936002,51072089,51372130);National Key Project of Science and Technology(2011ZX02403-002);Natural Science Foundation of Beijing(NSF 3111002)
摘 要:研究了质子辐照对多层膜巨磁电阻结构磁性能的影响。利用5 MeV的不同辐照剂量和剂量率的质子对磁控溅射法制备的CoFe/(CoFe/Cu)10/CoFe/Ta多层膜巨磁电阻结构进行辐照实验。XRD分析表明质子辐照没有改变CoFe/Cu的晶格结构。分析磁滞回线和磁电阻曲线得知在实验选取的辐照剂量范围内,饱和磁化强度和本征电阻随着辐照剂量的增加而增加,而矫顽场和磁电阻率随剂量的增加而减小。利用质子辐照对自旋相关散射、平均自由程的影响解释了本征电阻的变化,并基于二流体模型对磁电阻率的变化进行了分析。由此得出,多层膜巨磁电阻结构具有一定的抗辐照能力。The magnetic properties of proton irradiated CoFe/(CoFe/Cu)10/CoFe/Ta giant magnetoresistance multilayers (GMR-MLs) were investigated experimentally and theoretically. GMR-MLs were prepared by magnetron sputtering and exposed to 5 MeV proton beam with a series of radiation fluences and fluence rates. X-ray diffraction indicated that the crystal structures of CoFe/Cu were unaffected after irradiation. The saturation magnetization and intrinsic resistance increased monotonically with the increase of the radiation fluence and fluence rate. The value of MR in the irradiated samples decreased slightly with the radiation fluence, which was mainly explained from the two spin- related conductivity channel model.
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