CMOS射频集成电路的现状与进展  

A Review of the Research on CMOS Radio Frequency Integrated Circuits

作　　者：王志华[1] 吴恩德[1] 

机构地区：[1]清华大学电子工程系,北京100084

出　　处：《电子学报》2001年第2期233-238,共6页Acta Electronica Sinica

基　　金：国家重点基础研究发展规划项目! (G2 0 0 0 0 3650 8)

摘　　要：随着低功耗、可移动个人无线通信的发展和CMOS工艺性能的提高 ,用CMOS工艺实现无线通信系统的射频前端不仅必要而且可能 .本文讨论了用CMOS工艺实现射频集成电路的特殊问题 .首先介绍各种收发器的体系结构 ,对它们的优缺点进行比较 ,指出在设计中要考虑的一些问题 .其次讨论CMOS射频前端的重要功能单元 ,包括低噪声放大器、混频器、频率综合器和功率放大器 .对各单元模块在设计中的技术指标 ,可能采用的电路结构以及应该注意的问题进行了讨论 .此外 ,论文还讨论了射频频段电感、电容等无源器件集成的可能性以及方法 .最后对CMOS射频集成电路的发展方向提出了一些看法 .With the development of low power mobile wireless personal communication and the improvement of performance of CMOS technology,to implement a RF front end of a wireless communication system using CMOS technology is not only neceessary but also feasible.In this paper,special issues to implement the RF integrated circuits are discussed.Firstly,a variety of transceiver architectures are reviewed in comparison of their characteristics and kernel issues that should be addressed in transceiver design.Secondly,important building blocks of CMOS RF front end,including low noise amplifier,mixer,frequency synthesizer and power amplifier,are discussed.The core subject of such building blocks such as figure of merit,possible circuit schematics and others are presented.Thirdly,the possibilities and methods to integrate the inductor and capacitor in the RF band are figured out in this paper.And,finally a perspective for the development of CMOS RF integrated circuits are dressed out.

关 键 词：CMOS射频集成电路 低噪声放大器 混频器 频率综合器 功率放大器 无线通信系统 

分 类 号：TN432[电子电信—微电子学与固体电子学]