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作 者:郑丹[1,2]
机构地区:[1]武汉软件工程职业学院光电系,湖北武汉430205 [2]湖北大学物电学院,湖北武汉430062
出 处:《新技术新工艺》2014年第2期83-85,共3页New Technology & New Process
摘 要:在p型(100)单晶Si基衬底上,利用磁控溅射设备完成直流溅射Mo/Ti布拉格反射层和射频反应溅射AlN压电层,用光刻微加工工艺设计了不同谐振面积与电极图案的Ti/Au上电极,在优化工艺条件下制备了氮化铝基体声波质量传感器,比较分析了不同电极图案和谐振面积对传感器性能的影响。研究表明,电极图案相同时,谐振面积为10 000(100×100)μm2的器件电学性能最好,谐振面积相同时,电极图案为圆形的损耗最小;内角为直角的正方形损耗最大,内角为钝角的五边形损耗居中。Using the magnetron sputtering,Mo/Ti bragg reflector and AlN piezoelectric layer were sputtered sequentially under DC and RF condition on P type monocrystal Si substrate,Different areas and patterns top Ti/Au electrodes were designed by using optical carving process,Aluminium nitride using in mass sensor was prepared under the condition of optimal process,the resonance capability was comparatively analyzed between different areas and patterns of the electrode.The results showed that the device has the better performance when the resonance area is 10 000(100 × 100) μm2.For different electrode patterns,the square electrode pattern with right angle and parallel edges has the biggest lost,pentagonal electrode with obtuse interior angle takes second place in loss,and circular electrode circular has the smallest lost.
分 类 号:TN405[电子电信—微电子学与固体电子学]
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