β-FeSi_2 as the bottom absorber of triple-junction thin-film solar cells: A numerical study  

作　　者：袁吉仁 沈鸿烈 周浪 黄海宾 周耐根 邓新华 余启名 

机构地区：[1]School of Materials Science and Engineering, Nanchang University [2]College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics [3]School of Science, Nanchang University

出　　处：《Chinese Physics B》2014年第3期663-668,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.61176062,61306084,and 51361022);the Priority Academic Program Development of Jiangsu Higher Education Institutions,China;the Ph.D.Program Foundation of Ministry of Education of China(Grant No.20113601120006);the Natural Science Foundation of Jiangxi Province,China(Grant No.20122BAB202002);the Science and Technology Project of Education Department of Jiangxi Province,China(Grant No.GJJ13010)

摘　　要：Using β-FeSi2 as the bottom absorber of triple-junction thin-film solar cells is investigated by a numerical method for widening the long-wave spectral response. The presented results show that the β-FeSi2 subcell can contribute 0.273 V of open-circuit voltage to the a-Si/μc-Si/β-FeSi2 triple-junction thin-film solar cell. The optimized absorber thicknesses for a- Si, μ-Si, and/3-FeSi2 subcells are 260 nm, 900 nm, and 40 nm, respectively. In addition, the temperature coefficient of the conversion efficiency of the a-Si/μc-Si//3-FeSi2 cell is -0.308 %/K, whose absolute value is only greater than that of the a-Si subcell. This result indicates that the a-Si/μc-Si/β-FeSi2 triple-junction solar cell has a good temperature coefficient. As a result, using β-FeSi2 as the bottom absorber can improve the thin-film solar cell performance, and the a-Si/μc-Si/β-FeSi2 triple-junction solar cell is a promising structure configuration for improving the solar cell efficiency.Using β-FeSi2 as the bottom absorber of triple-junction thin-film solar cells is investigated by a numerical method for widening the long-wave spectral response. The presented results show that the β-FeSi2 subcell can contribute 0.273 V of open-circuit voltage to the a-Si/μc-Si/β-FeSi2 triple-junction thin-film solar cell. The optimized absorber thicknesses for a- Si, μ-Si, and/3-FeSi2 subcells are 260 nm, 900 nm, and 40 nm, respectively. In addition, the temperature coefficient of the conversion efficiency of the a-Si/μc-Si//3-FeSi2 cell is -0.308 %/K, whose absolute value is only greater than that of the a-Si subcell. This result indicates that the a-Si/μc-Si/β-FeSi2 triple-junction solar cell has a good temperature coefficient. As a result, using β-FeSi2 as the bottom absorber can improve the thin-film solar cell performance, and the a-Si/μc-Si/β-FeSi2 triple-junction solar cell is a promising structure configuration for improving the solar cell efficiency.

关 键 词：Β-FESI2 solar cell temperature coefficient conversion efficiency 

分 类 号：TM914.42[电气工程—电力电子与电力传动] TN804[电子电信—信息与通信工程]