Single event effect in a ferroelectric-gate field-effect transistor under heavy-ion irradiation  

作　　者：燕少安 唐明华 赵雯 郭红霞 张万里 徐新宇 王旭东 丁浩 陈建伟 李正 周益春 

机构地区：[1]Key Laboratory of Low Dimensional Materials and Application Technology of the Ministry of Education, Xiangtan University [2]Northwest Institute of Nuclear Technology [3]Brookhaven National Laboratory

出　　处：《Chinese Physics B》2014年第4期433-437,共5页中国物理B（英文版）

基　　金：Project supported by the Key Project of the National Natural Science Foundation of China(Grant No.11032010);the National Natural Science Foundationof China(Grant Nos.51072171,61274107,61176093,and 11275163);the Program for Changjiang Scholars and Innovative Research Team in University,China(Grant No.IRT1080);the 973 Program,China(Grant No.2012CB326404);the Key Project of Natural Science Foundation of Hunan Province,China(Grant No.13JJ2023);the Key Project of Scientific Research Fund of Education Department of Hunan Province,China(Grant No.12A129);the Innovation Foundation of Hunan Province of China for Postgraduate,China(Grant No.CX2013B261);the Doctoral Program of Higher Education of China(GrantNo.20104301110001);the Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province,China

摘　　要：The single event effect in ferroelectric-gate field-effect transistor （FeFET） under heavy ion irradiation is investigated in this paper. The simulation results show that the transient responses are much lower in a FeFET than in a conventional metal-oxide-semiconductor field-effect transistor （MOSFET） when the ion strikes the channel. The main reason is that the polarization-induced charges （the polarization direction here is away from the silicon surface） bring a negative surface po- tential which will affect the distribution of carders and charge collection in different electrodes significantly. The simulation results are expected to explain that the FeFET has a relatively good immunity to single event effect.The single event effect in ferroelectric-gate field-effect transistor （FeFET） under heavy ion irradiation is investigated in this paper. The simulation results show that the transient responses are much lower in a FeFET than in a conventional metal-oxide-semiconductor field-effect transistor （MOSFET） when the ion strikes the channel. The main reason is that the polarization-induced charges （the polarization direction here is away from the silicon surface） bring a negative surface po- tential which will affect the distribution of carders and charge collection in different electrodes significantly. The simulation results are expected to explain that the FeFET has a relatively good immunity to single event effect.

关 键 词：single event effect heavy ion irradiation charge collection ferroelectric memory FEFET 

分 类 号：O562[理学—原子与分子物理]