云南高校图书馆联盟文献共享服务平台- FEFET

FEFET: 作品数：11被引量：4H指数：1; 导出分析报告; 相关作者：黄如黄芊芊唐克超卓成王金斌更多>>; 相关机构：湘潭大学北京大学浙江大学之江实验室更多>>; 相关期刊：《湘潭大学学报（自然科学版）》《Chinese Physics B》《Journal of Advanced Dielectrics》《微纳电子与智能制造》更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国家教育部博士点基金更多>>

西安电子科技大学在铁电场效应晶体管(FeFET)存储和存算技术领域取得重要进展: 《陕西教育(高教版)》2025年第4期9-9,共1页陈栋(整理); 据西安电子科技大学网站,近日,西安电子科技大学杭州研究院(西电杭研院)韩根全教授课题组在铁电场效应晶体管(FeFET)存储和存算技术领域取得重要进展,相关研究成果以“Low-power Edge Detection Based on Ferroelectric Field-Effect Tr...; 关键词：铁电场效应晶体管西安电子科技大学 FET

基于FeFET的完全非易失全加器设计: 《宁波大学学报(理工版)》2025年第2期71-77,共7页王凯玥查晓婧王伦耀夏银水; 国家自然科学基金(62304115,U23A20351);浙江省自然科学基金创新群体项目(LDT23F04021F04).; 铁电场效应晶体管(Ferroelectric Field-Effect Transistor,FeFET)的滞回特性使其既可充当开关又可充当非易失性存储元件,常被应用于存内逻辑电路设计.然而现有基于FeFET的存内逻辑电路设计存在计算时需要访问部分操作数,输出需要额外...; 关键词：铁电场效应晶体管存内逻辑非易失性全加器

An AND-type 1T-FeFET array with robust write and read operations: 《Science China(Information Sciences)》2025年第2期391-392,共2页Jiacheng XU Jiayi ZHAO Hongrui ZHANG Haoji QIAN Jiani GU Bowen CHEN Gaobo LIN Rongzong SHEN Xinda SONG Huan LIU Yian DING Minglei MA Miaomiao ZHANG Xiao YU Bing CHEN Ran CHENG Gaobo XU Huaxiang YIN Yan LIU Jiajia CHEN Chengji JIN Genquan HAN; supported in part by National Key R&D Program of China(Grant No.2023YFB4402303);National Natural Science Foundation of China(Grant Nos.62204228,62204229,62204226,62025402,91964202)。; HfO_(2)-based ferroelectric field-effect transistor(Fe FET)has become a promising solution for next-generation embedded non-volatile memory(NVM)owing to its complementary metal-oxide-semiconductor(CMOS)compatibility,s...; 关键词：POLARIZATION TRAPPING operations

Broadband light-active optoelectronic FeFET memory for in-sensor non-volatile logic: 《Science China(Information Sciences)》2024年第9期342-343,共2页Yong ZHANG Dongxin TAN Cizhe FANG Zheng-Dong LUO Qiyu YANG Qiao ZHANG Yu ZHANG Xuetao GAN Yan LIU Yue HAO Genquan HAN; supported by National Key R&D Program of China(Grant No.2023YFB4402303);Fundamental Research Funds for the Central Universities(Grant No.YJSJ24020);National Natural Science Foundation of China(Grant Nos.62090033,62025402,62274128,92264202,62293522,92364204);Zhejiang Provincial Natural Science Foundation of China(Grant No.LDT23F04023F04);Innovation Find of Xidian University。; Machine vision has become crucial in the modern intelligence era,especially in rapidly developing applications such as autonomous vehicles and robotic visual sensors[1].With the ever-increasing requirements of visual ...; 关键词：visual AUTONOMOUS OPTOELECTRONIC

Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications被引量：1: 《Science China(Information Sciences)》2023年第10期80-100,共21页Zhaohao ZHANG Guoliang TIAN Jiali HUO Fang ZHANG Qingzhu ZHANG Gaobo XU Zhenhua WU Yan CHENG Yan LIU Huaxiang YIN; supported by National Natural Science Foundation of China(Grant Nos.92064003,91964202)。; Hafnium oxide-based ferroelectric field-effect-transistors(FeFET),which combine super-steep logical switching and low power non-volatile memory functions,have significant potential for post-Moore integrated circuit in...; 关键词：FERROELECTRIC FEFET hafnium oxide HZO logic-in-memory neuromorphic computing

SiON界面层对铪基FeFET栅缺陷影响的第一性原理研究被引量：1: 《微纳电子与智能制造》2023年第3期35-40,共6页柴俊帅徐昊王晓磊罗军王文武叶甜春; SiON界面层是提升铪基铁电场效应晶体管疲劳特性的一个有效方法,然而,其物理机制目前尚不清楚。在这项工作中,基于第一性原理计算,通过构建结构为o-Hf_(0.5)Zr_(0.5)O_(2)/SiON/Si和o-Hf_(0.5)Zr_(0.5)O_(2)/SiO_(2)/Si的铪基Fe FET栅...; 关键词：铁电场效应晶体管氧化铪疲劳特性栅缺陷第一性原理计算

低能质子辐射对铁电场效应晶体管性能影响模拟: 《现代应用物理》2021年第4期121-127,共7页黄景谭鹏飞刘怡廷李波; 国家自然科学基金资助项目(61704127);强脉冲辐射环境模拟与效应国家重点实验室专项资助项目(SKLIPR1816)。; 基于铁电材料极化模拟的相场模型,结合半导体器件方程建立了金属-铁电-绝缘层-半导体结构铁电场效应晶体管(FeFET)性能研究的理论模型,利用蒙特卡方法模拟分析质子辐照产生的缺陷对FeFET性能的影响.计算结果表明,当入射角度为0,能量为10...; 关键词：质子辐射 FEFET 相场方法

铁电场效应晶体管及其反相器的TCAD模拟研究: 《湘潭大学学报（自然科学版）》2019年第4期66-75,共10页王冬毛燕湖燕少安肖永光唐明华; 国家自然科学基金项目(61804130,11835008,51872250); 以铁电场效应晶体管(Ferroelectric Field Effect Transistor,FeFET)为存储单元的铁电存储器具有低功耗、高密度、高速度、抗辐射和非挥发性等优点,在航空航天以及民用消费电子中都有广阔的应用前景.但是,对于由FeFET构成的同时具有逻...; 关键词：FEFET FeCMOS 反相器电学性能 TCAD仿真

Recent progress on integrating two-dimensional materials with ferroelectrics for memory devices and photodetectors被引量：2: 《Chinese Physics B》2017年第3期114-120,共7页王建禄胡伟达; Project supported by the Major State Basic Research Development Program of China(Grant Nos.2013CB922302 and 2016YFA0203900);the Natural Science Foundation of China(Grant Nos.11322441,614404147,61574152,and 61674157);the Key Research Project of Frontier Science of Chinese Academy of Sciences(Grant Nos.QYZDB-SSW-JSC016 and QYZDB-SSW-JSC031); Two-dimensional （2D） materials, such as graphene and MoS2 related transition metal dichalcogenides （TMDC）, have attracted much attention for their potential applications. Ferroelectrics, one of the special and tra...; 关键词：two-dimensional materials FERROELECTRICS FEFET PVDF PHOTODETECTOR

Single event effect in a ferroelectric-gate field-effect transistor under heavy-ion irradiation: 《Chinese Physics B》2014年第4期433-437,共5页燕少安唐明华赵雯郭红霞张万里徐新宇王旭东丁浩陈建伟李正周益春; Project supported by the Key Project of the National Natural Science Foundation of China(Grant No.11032010);the National Natural Science Foundationof China(Grant Nos.51072171,61274107,61176093,and 11275163);the Program for Changjiang Scholars and Innovative Research Team in University,China(Grant No.IRT1080);the 973 Program,China(Grant No.2012CB326404);the Key Project of Natural Science Foundation of Hunan Province,China(Grant No.13JJ2023);the Key Project of Scientific Research Fund of Education Department of Hunan Province,China(Grant No.12A129);the Innovation Foundation of Hunan Province of China for Postgraduate,China(Grant No.CX2013B261);the Doctoral Program of Higher Education of China(GrantNo.20104301110001);the Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province,China; The single event effect in ferroelectric-gate field-effect transistor （FeFET） under heavy ion irradiation is investigated in this paper. The simulation results show that the transient responses are much lower in a F...; 关键词：single event effect heavy ion irradiation charge collection ferroelectric memory FEFET

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