Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications  

作　　者：Zhaohao ZHANG Guoliang TIAN Jiali HUO Fang ZHANG Qingzhu ZHANG Gaobo XU Zhenhua WU Yan CHENG Yan LIU Huaxiang YIN 

机构地区：[1]Integrated Circuit Advanced R&D Center,Institute of Microelectronics of Chinese Academy of Sciences,Beijing,100029,China [2]School of Integrated Circuits,University of Chinese Academy of Sciences,Beijing,100049,China [3]Department of Electronics,East China Normal University,Shanghai,200241,China [4]School of Microelectronics,Xidian University,Xi’an,710071,China

出　　处：《Science China(Information Sciences)》2023年第10期80-100,共21页中国科学（信息科学）（英文版）

基　　金：supported by National Natural Science Foundation of China(Grant Nos.92064003,91964202)。

摘　　要：Hafnium oxide-based ferroelectric field-effect-transistors(FeFET),which combine super-steep logical switching and low power non-volatile memory functions,have significant potential for post-Moore integrated circuit innovations with higher energy efficiency and larger integration scale.In this review,recent research into hafnium oxide-based ferroelectric(FE)films and different functional devices is presented,from fundamentals to applications.Different technological challenges and state-of-the-art research and development efforts related to the physical understanding and performance optimization of FE films,advanced hafnium oxide-based device integration,and device applications in logic-in-memory and artificial synapses and neurons for neuromorphic computing are addressed.

关 键 词：FERROELECTRIC FEFET hafnium oxide HZO logic-in-memory neuromorphic computing 

分 类 号：TN386[电子电信—物理电子学] TP333[自动化与计算机技术—计算机系统结构]