基于Cu/SiO_x/Al结构的阻变存储器多值特性及机理的研究  

Multilevel switching mechanism for resistive random access memory based on Cu/SiO_x/Al structure

作　　者：陈然[1] 周立伟[1] 王建云[1] 陈长军[1] 邵兴隆[1] 蒋浩[1] 张楷亮[1] 吕联荣[1] 赵金石[1] 

机构地区：[1]天津理工大学电子信息工程学院,天津市薄膜电子与通信器件重点验室,天津300384

出　　处：《物理学报》2014年第6期227-234,共8页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:61274113;11204212);教育部新世纪优秀人才支持计划(批准号:NCET-11-1064);天津市科技计划项目(批准号:13JCYBJC15700;13JCZDJC26100);天津市高等学校科技发展基金计划(批准号:20100703;20130701)资助的课题~~

摘　　要：采用氧化硅材料构建了Cu/SiOx/Al的三明治结构阻变存储器件.用半导体参数分析仪对其阻变特性进行测量,结果表明其具有明显的阻变特性,并且通过调节限制电流,得到了四个稳定的阻态,各相邻阻态的电阻比大于10,并且具有良好的数据保持能力.在不同温度条件下对各个阻态进行电学测试及拟合,明确了不同阻态的电子传输机理不尽相同:阻态1和阻态2为欧姆传导机制,阻态3为P-F(Pool-Frenkel)发射机制,阻态4为肖特基发射机制.根据电子传输机制,建立了铜细丝导电模型并对Cu/SiOx/Al阻变存储器件各个阻态的电致阻变机制进行解释.In this paper, resistive switching device based on Cu/SiOx/Al structure is fabricated to examine its resistive switch-ing characteristics and explore its resistive switching mechanisms. By adjusting limiting current, four stable resistance states are obtained. All of the resistive ratios between adjacent resistance states are over than 10. Moreover, the reten-tion data of these four states at room temperature keep stable up to 1000 s. The temperature-dependent measurement and I-V curves fitting results show that the resistive switching mechanisms of the four states are different： resistance states 1 and 2 are due to Ohmic conduction mechanism, resistance state 3 is due to Pool-Frenkel emission, and resistance state 4 is due to Schottky emission mechanism. Subsequently, a resistive switching model for Cu/SiOx/Al structure is proposed.

关 键 词：阻变存储器 SIOX薄膜 多值存储 阻变机理 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]