H_2气氛退火处理对Nb掺杂TiO_2薄膜光电性能的影响  

Effects of annealing in H_2 atomsphere on optoelectronical properties of Nb-doped TiO_2 thin films

作　　者：张彬[1] 王伟丽[1] 牛巧利[1] 邹贤劭 董军[1] 章勇[1] 

机构地区：[1]华南师范大学,光电子材料与技术研究所,广州510631

出　　处：《物理学报》2014年第6期278-283,共6页Acta Physica Sinica

基　　金：广东省科技攻关项目(批准号:2012B010200032);国家自然科学基金(批准号:U1174001);广东省自然科学基金(批准号:S2011010003400);广东省省部产学研项目(批准号:2011A091000033);广州市珠江科技新星项目(批准号:2012J2200023)资助的课题~~

摘　　要：采用电子束沉积方法,以钛酸锶(SrTiO3)为衬底制备铌(Nb)掺杂TiO2薄膜并研究后续H2气氛退火处理对其薄膜样品光电性能的影响.结果发现H2气氛热退火处理能有效改善Nb掺杂TiO2薄膜的导电率,最佳电阻率达到5.46×10-3Ω·cm,在可见光范围内的透光率为60%—80%.导电性能的改善与H2气氛退火处理后多晶薄膜的晶粒尺寸变大和大量的氧空位形成及H原子掺杂有关.Niobium-doped TiO2 thin films are deposited on strontium titanate substrates by E-beam evaporation deposition. Effects of post-annealing in hydrogen atmosphere on their optoelectrical properties are studied. The results show that the annealing in hydrogen atmosphere can enhance their conductivity values efficiently. The corresponding optium resistivity reaches 5.46 ＆#215; 10-3？＆#183;cm, and the transmittance values of the thin films are 60%-80%. The improvement in the conductive performance is attributed to the increase of the grain size of polycrystalline thin film, the formation of a lot of oxygen vacancies and H-doping caused by annealing in hydrogen atmosphere.

关 键 词：Nb掺杂TiO2 电子束沉积 退火 薄膜 Nb-doped TIO2 

分 类 号：O484.4[理学—固体物理]