光辐照对单根In掺杂ZnO纳米线电学性质的影响  

Influence of UV Irradiation for Electrical Properties of Individual In Doped ZnO Nanowires

作　　者：王明姣 高红[1] 温静[1] 唐欣月[1] 张锷[1] 

机构地区：[1]哈尔滨师范大学物理与电子工程学院,光电带隙材料省部共建教育部重点实验室,哈尔滨150025

出　　处：《人工晶体学报》2014年第2期345-349,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金(11074060;51172058);黑龙江省教育厅科学技术研究重点项目(12521z012)

摘　　要：通过化学气相沉积方法成功制备了高质量的In掺杂ZnO纳米线。选用325 nm的He-Cd激光器做为光源,进一步探究了单根In掺杂ZnO纳米线的光响应特性。结果表明:紫外光辐照可使金属电极与纳米线之间的有效肖特基接触势垒下降,使接触类型由肖特基接触转变到欧姆接触;撤去紫外光后,电极与纳米线之间的接触可以恢复到未光照时的肖特基接触。讨论了肖特基接触与欧姆接触之间转变的物理机制。High-quality In doped ZnO nanowires were prepared by chemical vapour deposition method. The photoresponse properties of the individual nanowire was investigated by the He-Cd laser （325 nm）. The results show the UV light irradiation tends to decrease the height of the effective Schottky barrier at the metal and ZnO nanowires contacts, the contacts can be transformed from Schottky to Ohmic. After tuning off the UV light, the contact between electrode and nanowires could recover to physical mechanisms of the conversion between Schottky contact and Ohmic contact Schottky contact. The were also discussed.

关 键 词：铟掺杂ZnO纳米线 紫外光辐照 肖特基接触 欧姆接触 

分 类 号：TN304[电子电信—物理电子学]