单晶CuS纳米线的电沉积合成及结构表征  

Preparation and characterization of single crystal CuS nanowires using electro-deposition method

作　　者：王裕希 吴幸[1] 徐峰[1] 孙立涛[1] 

机构地区：[1]东南大学-FEI纳皮米中心,MEMS教育部重点实验室,东南大学,江苏南京210096

出　　处：《电子显微学报》2014年第1期14-18,共5页Journal of Chinese Electron Microscopy Society

基　　金：国家自然科学基金资助项目(No.51071044);教育部科学技术研究重大项目(No.311019)

摘　　要：采用多孔AAO模板辅助的有机溶剂电化学沉积技术,制备出尺寸均匀,平均直径30nm的单晶CuS纳米线。利用透射电子显微技术研究了纳米线的晶体结构和元素成分,分析了不同沉积电流密度对CuS纳米晶形核及生长过程的影响。研究结果表明,电流密度过小,容易导致S单质向S2-还原速度竞争不过Cu2+与S2-反应成核的速度,从而出现Cu34S32(即CuS0.95);电流密度过大,则会导致成核过程抑制生长过程,得到的CuS纳米晶均为多晶形态。Using organic electro-chemical deposition technique with porous aluminum anodic oxide template, single-crystalline CuS nanowires with uniform size and average 30 nm in diameter were synthesized. The crystal phase information and chemical composition of CuS nanowires were characterized by transmission electron microscopy. Process of crystal nucleation and growth of CuS nano-crystals under different deposition current density were studied in detailed. The results show that：（1）if the current density was too small, rate of reduction of sulfur can’t satisfied the reaction between Cu2＋and S2-, and then Cu34S32（namely CuS0？95） appeared;（2） if current density was excessive, the rate of nucleation would inhibit the rate of crystal growth process, and then poly-crystalline CuS was synthesized.

关 键 词：硫化铜纳米线 电化学沉积 单晶生长 高分辨透射电子显微技术 

分 类 号：TB383.1[一般工业技术—材料科学与工程]