双极脉冲磁控溅射制备Mo薄膜背接触电极  

Performance of the Mo thin film back electrode by bipolar pulsed magnetron sputtering

作　　者：沈晓月[1] 刘贵山[1] 黄贝[1] 方仁德 胡志强[1] 郝洪顺[1] 

机构地区：[1]大连工业大学纺织与材料工程学院,辽宁大连116034

出　　处：《大连工业大学学报》2013年第6期457-460,共4页Journal of Dalian Polytechnic University

基　　金：辽宁省教育厅重点实验室科技项目(2008S017);大连科技平台建设项目(2010-354)

摘　　要：采用双极脉冲磁控溅射技术在钠钙玻璃衬底上制备了CIGS薄膜太阳电池的Mo薄膜背接触电极,通过SEM对薄膜厚度的测试,研究了不同沉积时间和衬底温度下Mo薄膜溅射速率的变化规律;通过XRD、SEM、紫外-可见分光光度计和四探针电阻测试仪对薄膜的晶体结构、表面形貌以及光电学性能进行表征,着重探讨了沉积时间和衬底温度对Mo薄膜生长、结构及性能的影响。研究结果表明,薄膜的沉积速率随沉积时间和衬底温度而变化,沉积30min后,沉积速率趋于稳定;衬底温度100℃时,薄膜沿(110)晶面定向生长被打乱,表现为沿(211)晶面生长更为显著,SEM分析发现此时晶粒为略带间隙的梭形结构,且晶体呈柱状生长。Mo film was deposited by bipolar pulsed magnetron sputtering on glass substrates for back electrode of CIGS film solar cells. The film thickness was measured by SEM to investigate the influence of deposition time and substrate temperature on deposition rate and the varying methods, such as XRD, SEM, UV-Vis spectrophotometer and four-point probe, were used to characterized the film morphology, structural and optical properties. The results showed that the deposition rate varied with different deposition time and substrate temperature. The constant deposition rate was observed after deposed for 30 minutes. Mo film at 100 ~C showed highly preferred orientation （211） growth, which replaced the preferred orientation （110） growth, and loose elongated shape particles and columnar morphology.

关 键 词：双极脉冲磁控溅射 铜铟镓硒(CIGS)薄膜太阳电池 MO薄膜 

分 类 号：O484[理学—固体物理]