硅基Ⅱ-Ⅵ族单结及多结太阳电池研究进展  

Research Progress on Si Based Ⅱ-Ⅵ Single-Junction and Multi-Junction Solar Cells

作　　者：张理嫩[1] 刘超[1] 崔利杰[1] 曾一平[1] 

机构地区：[1]中国科学院半导体研究所半导体材料科学重点实验室,北京100083

出　　处：《半导体技术》2014年第4期241-247,共7页Semiconductor Technology

基　　金：国家自然科学基金资助项目(61376058)

摘　　要：Ⅱ-Ⅵ族材料具有少子寿命对位错不敏感、禁带宽度范围大及成本低等优点,分子束外延(MBE)生长的Si基Ⅱ-Ⅵ族材料可以作为新的材料体系应用于多结太阳电池中,并且开发新型Si基Ⅱ-Ⅵ族多结电池的效率有可能高于目前的Ⅲ-Ⅴ族多结电池。综述了MBE生长的Si基高质量CdTe和CdZnTe单晶薄膜以及对其进行n型和p型掺杂实验的研究进展。着重介绍了美国EPIR公司对以p-Si为衬底的CdZnTe单结电池和CdZnTe/Si双结电池原型器件的研究成果,其光伏转换效率分别达到了16%和17%,分析了研制高效率Si基Ⅱ-Ⅵ族多结电池面临的技术问题和提高电池效率的可能途径。For the advantages of little impact of the dislocations on the minority carrier lifetime, large range of band-gap and low-cost, Ⅱ-Ⅵ semiconductor materials grown on large-area Si substrates by the molecular beam epitaxy （MBE） can be an attractive alternative material system in tandem multi-junc- tion （MJ） solar cells. It is very promising that the efficiency of the developing Si basedⅡ-Ⅵ MJ solar cells may be higher than that of Ⅲ-Ⅴ MJ solar cells. MBE growth of high quality CdTe and CdZnTe films on Si substrates and n/p amphoteric doping of CdTe and CdZnTe are introduced. Research results of sin- gle junction CdZnTe solar ceils and dual-junction CdZnTe/Si solar cells fabricated on p-type Si substrates by EPIR, of which photovohaic conversion efficiency is 16% and 17% respectively, are emphatically presented. Problems and challenges that may be faced with Si based Ⅱ-Ⅵ MJ solar cells and their possi- ble solutions are discussed.

关 键 词：Ⅱ-Ⅵ族化合物材料 硅基 多结(MJ)太阳电池 分子束外延(MBE) 光伏效率 

分 类 号：TM914.4[电气工程—电力电子与电力传动] TN304.25[电子电信—物理电子学]