稀磁半导体制备方法的研究进展  

Research Progress on the Preparation Methods of Diluted Magnetic Semiconductors

作　　者：侯志青[1] 刘东州[1] 那木拉[1] 

机构地区：[1]河北农业大学理学院,河北保定071001

出　　处：《半导体技术》2014年第4期294-299,共6页Semiconductor Technology

基　　金：保定市科技局基金资助项目(13ZR061);河北省留学回国人员择优资助项目(20120322)

摘　　要：稀磁半导体(DMS)是一种新型功能材料,其结合了半导体和磁性材料的电学和磁学性质,具有优异的磁、磁光和磁电等性能,在未来的光电器件、自旋电子器件和计算机等领域具有广阔的开发应用前景。简述了我国稀磁半导体的研究成果及进展,重点讨论了稀磁半导体的制备合成方法,分析了各种制备方法的优缺点,包括分子束外延技术(MBE)、离子注入法、脉冲激光沉积(PLD)、助熔剂法、化学气相沉积(CVD)、溶胶-凝胶和水热法等。同时分析了目前稀磁半导体遇到的问题和困难,探讨了其解决方法,展望了稀磁半导体潜在的应用前景。Diluted magnetic semiconductor （DMS） is a new functional material, shows the broad development and the application prospects in future optoelectronic devices, spin electronic devices and computer, etc. The material consists of electrical and magnetic properties of semiconductor and magnetic materials, which have excellent magnetic, magneto-optical, magnetoelectric and other properties. The domestic research achievement and progress of the DMS are discussed briefly. The preparation methods of the DMS are reviewed, and their advantages and disadvantages are analyzed, including molecular beam epitaxy （MBE）techniques, ion implantation, pulsed laser deposition （PLD）, flux method, chemical vapor deposition （CVD） , sol-gel method, hydrothermal metho, etc. Then the problems and difficulties of the DMS are analyzed, the solutions are discussed and the application prospect of the DMS is prospected.

关 键 词：稀磁半导体 制备方法 掺杂 居里温度 室温铁磁性 

分 类 号：TN304.7[电子电信—物理电子学]