散射电场对激光烧蚀制备纳米Si晶粒分布和尺寸的影响  

Influence of scattering electric field on the distribution and average size of Si nanoparticles prepared by laser ablation

作　　者：王英龙[1] 宗煜[1] 褚立志[1] 邓泽超[1] 丁学成[1] 

机构地区：[1]河北大学物理科学与技术学院,河北保定071002

出　　处：《河北大学学报（自然科学版）》2014年第2期137-142,共6页Journal of Hebei University(Natural Science Edition)

基　　金：973计划前期研究专项资助项目(2011CB612305);河北省自然科学基金资助项目(E2012201035;E2011201134)

摘　　要：在10Pa的氩气环境下采用了脉冲激光烧蚀技术(PLA),通过引入散射电场沉积制备了纳米Si晶粒薄膜.X线衍射谱(XRD)和Raman谱测量均证实了在薄膜中已经形成了纳米Si晶粒;利用扫描电子显微镜(SEM)对所制备的薄膜进行了形貌表征.结果表明,纳米Si晶粒的分布以及其平均尺寸均相对于轴向呈对称分布,加入散射电场后纳米Si晶粒的分布范围增大,其平均尺寸最大值所对应与靶的轴向夹角变大.利用MATLAB对烧蚀颗粒在散射电场的运动过程进行数值模拟,得到与实验结果一致的规律.The nanocrystalline silicon films were prepared by pulsed laser ablation （PLA） at the ambi- ent Ar pressure of 10 Pa and the introduced scattering electric field. Both the X-ray diffraction（XRD） and Raman spectra indicate the films are nanocrystalline, which means that they were composed of Si nanopar- ticles; the surface morphology of the nanocrystalline silicon films were observed by using scanning electron microscopy（SEM）. The result indicated that the distribution and average size of Si nanoparticles in the axi- al symmetric distribution reative deviation, and the axial angle with the target of maximum average size and distribution increase with the introduced scattering electric field. The motion process of ablated parti- cles in the scattering electric field was numerically simulated by MATLAB. The numerical simulations ac- cord with the experimental results.

关 键 词：纳米SI晶粒 散射电场 激光烧蚀 平均尺寸 

分 类 号：O484.1[理学—固体物理]