基于SiGe HBT的射频功率放大器  

Radio Frequency Power Amplifier Based on SiGe HBT

作　　者：尤云霞[1] 陈岚[1] 王海永[1] 吕志强[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《微电子学与计算机》2014年第4期144-147,共4页Microelectronics & Computer

基　　金：国家科技重大专项课题(2009ZX02303-04)

摘　　要：基于国内的0.18μm SiGe BiCMOS工艺,针对该工艺下SiGe HBTs功率器件击穿电压、工作频段的稳定性和最优负载阻抗值等方面的研究,给出了功率放大器的设计优化过程,比较了功率SiGe HBTs在共射和共基两种结构下的频率与最大功率增益性能.实现了一款应用于2.4GHz无线通信的全集成A类功率放大器.测试结果表明:S11<-13dB,S22<-10dB,S21=13.8dB,输出1dB压缩点为10.97dBm,饱和输出功率为16.7dBm.Aiming at SiGe HBTs power devices, the breakdown voltage, stability in working frequency, maximum optimization load impedance and so on are researched based on a 0. 18 μm SiGe BiCMOS technology in a domestic foundry. And it gives the design and optimization process of power amplifier. The performance of frequency and maximum power gain of power SiGe HBTs in two configuration common emitter and common base are compared. A class A power amplifier with all devices integrated on chip is achieved which will be used in 2. 4GHz wireless communication field. Measurement results show that S11〈-13 dB,S22 〈-10 dB, S2a = 13.8 dB,output power 1 dI3 compressed is 10. 97 dBm, and saturation output power is 16.7 dBm.

关 键 词：功率放大器 SiGe异质结双极型晶体管 功率 S参数 

分 类 号：TN432[电子电信—微电子学与固体电子学] TN722.75