射频溅射微晶NiO_xH_y膜电致变色性能及其机理研究  

STUDY ON ELECTROCHROMIC PERFORMANCES AND MECHANISM OF MICROCRYSTAL NiO_xH_y THIN FILMS FABRICATED BY R.F.DEPOSITION

作　　者：冯博学[1] 谢亮[1] 王君[1] 蒋生蕊[1] 陈光华[1] 

机构地区：[1]兰州大学物理系,兰州730000

出　　处：《物理学报》2000年第10期2066-2071,共6页Acta Physica Sinica

基　　金：国家自然科学基金!(批准号 :698760 18)资助的课题&&

摘　　要：研究了射频溅射制备的NiOx 膜的电致变色性能 ,发现富氧非理想化学配比的NiOx(x >1)膜具有变色活性 ,这种膜出现Ni3 + 和Ni2 + 的混合价态 ,当H+ 注入并占据Ni空位时 ,导致Ni3 + 的t2g能级被填满 ,Ni3 + 被阴极还原为Ni2 + 引起光学透明 ,即为漂白态 ;反之 ,H+ 被萃取出NiOx 膜 ,导致Ni2 + 的t2g能级出现空穴 ,Ni2 + 被氧化为Ni3 + 引起光吸收 ,则为着色态 .In this article,the electrochromic (EC) properties of R.F.deposited NiO\- x thin films are investigated.It was found that non\|stoichiometric NiO\- x(x>1 ) thin films which are rich in O element have EC activation.In NiO\- x thin films exist both Ni 3+ and Ni 2+ ions.The insertion of H\++ ions and their sequential occupation of Ni vacation render t 2g energy levels of Ni 3+ ions completely filled.Thus,Ni 3+ is reduce to Ni 2+ ions and the NiO\- x films get light transparent.On the contrary,the extraction of H\++ ions from NiO\- x films will produce vacancies in the t 2g energy levels of Ni 2+ .Ni 2+ ions are oxidized to Ni 3+ ions,which makes NiO\- x films absorb light.The film is then colored.

关 键 词：电致变色 射频溅射 微晶 薄膜 

分 类 号：O484[理学—固体物理]