离子辐照单晶Si损伤效应的研究  

Radiation Damage in Silicon Induced by Ion Irradiation

作　　者：刘昌龙[1] 朱智勇[1] 侯明东[1] 金运范[1] 王志光[1] 

机构地区：[1]中国科学院近代物理研究所,甘肃兰州730000

出　　处：《原子核物理评论》2000年第3期140-145,共6页Nuclear Physics Review

基　　金：中国科学院"九五"重点项目!(KJ952-S1-423);国家自然科学基金资助项目!(19775058)

摘　　要：回顾了低能离子注入单晶 Si经由核弹性碰撞引起的损伤特征及其常规的研究方法 ,介绍了快重离子辐照单晶 Si经由电子能损引起的损伤特点及研究现状 。The radiation damage in silicon induced by low energy ion implantation was briefly reviewed together with a short introduction to the common techniques in the area. The damage characteristics of swift heavy ion irradiation in silicon and its investigations were introduced with emphasis on the effects induced by processes of electronic energy losses. It is shown that swift heavy ion can induce defects far beyond the projected range and up to 28 MeV/μm the electronic energy loss has little but not omissible effects on the defect production. The perspectives with the investigations were discussed.

关 键 词：离子辐照 损伤效应 电子能损 单晶硅 

分 类 号：TN304.12[电子电信—物理电子学] O571.33[理学—粒子物理与原子核物理]